Technische Details BSO203SPHXUMA1 Infineon
Description: MOSFET P-CH 20V 7A 8DSO, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Part Status: Not For New Designs, Supplier Device Package: PG-DSO-8, Vgs(th) (Max) @ Id: 1.2V @ 100µA, Power Dissipation (Max): 1.6W (Ta), Rds On (Max) @ Id, Vgs: 21mOhm @ 8.9A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide).
Weitere Produktangebote BSO203SPHXUMA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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BSO203SPHXUMA1 | Infineon Technologies |
 Description: MOSFET P-CH 20V 7A 8DSOOperating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Not For New Designs Supplier Device Package: PG-DSO-8 Vgs(th) (Max) @ Id: 1.2V @ 100µA Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 21mOhm @ 8.9A, 4.5V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BSO203SPHXUMA1 | Infineon Technologies |
Description: MOSFET P-CH 20V 7A 8DSO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 21mOhm @ 8.9A, 4.5V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 100µA Supplier Device Package: PG-DSO-8 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 15 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BSO203SPHXUMA1 | Infineon Technologies |
MOSFETs P-Ch -20V -8.9A DSO-8 OptiMOS P |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| BSO203SPHXUMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET P-CH 20V 7A 8DSO
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 1.2V @ 100µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET P-CH 20V 7A 8DSO
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 1.2V @ 100µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BSO203SPHXUMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET P-CH 20V 7A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.9A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 100µA
Supplier Device Package: PG-DSO-8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 15 V
Description: MOSFET P-CH 20V 7A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.9A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 100µA
Supplier Device Package: PG-DSO-8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSO203SPHXUMA1 |
|
Hersteller: Infineon Technologies
MOSFETs P-Ch -20V -8.9A DSO-8 OptiMOS P
MOSFETs P-Ch -20V -8.9A DSO-8 OptiMOS P
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH