
BSO207PHXUMA1 INFINEON TECHNOLOGIES

Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; 1.6W; PG-DSO-8
Mounting: SMD
On-state resistance: 45mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: -20V
Drain current: -5A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2211 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis |
---|---|
218+ | 0.33 EUR |
222+ | 0.32 EUR |
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Produktbewertung abgeben
Technische Details BSO207PHXUMA1 INFINEON TECHNOLOGIES
Description: MOSFET 2P-CH 20V 5A 8DSO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.6W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 5A, Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 15V, Rds On (Max) @ Id, Vgs: 45mOhm @ 5.7A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.2V @ 44µA, Supplier Device Package: PG-DSO-8, Part Status: Obsolete.
Weitere Produktangebote BSO207PHXUMA1 nach Preis ab 0.32 EUR bis 0.33 EUR
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BSO207PHXUMA1 | Hersteller : INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -5A; 1.6W; PG-DSO-8 Mounting: SMD On-state resistance: 45mΩ Type of transistor: P-MOSFET Power dissipation: 1.6W Polarisation: unipolar Case: PG-DSO-8 Technology: OptiMOS™ P Kind of channel: enhancement Gate-source voltage: ±12V Drain-source voltage: -20V Drain current: -5A |
auf Bestellung 2211 Stücke: Lieferzeit 14-21 Tag (e) |
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BSO207PHXUMA1 | Hersteller : Infineon Technologies |
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auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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BSO207PHXUMA1 | Hersteller : Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.6W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 15V Rds On (Max) @ Id, Vgs: 45mOhm @ 5.7A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 44µA Supplier Device Package: PG-DSO-8 Part Status: Obsolete |
Produkt ist nicht verfügbar |
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BSO207PHXUMA1 | Hersteller : Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.6W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 15V Rds On (Max) @ Id, Vgs: 45mOhm @ 5.7A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 44µA Supplier Device Package: PG-DSO-8 Part Status: Obsolete |
Produkt ist nicht verfügbar |