BSO211PH Infineon Technologies

Description: MOSFET 2P-CH 20V 4A 532FCBGA, Mounting Type: Surface Mount, Package / Case: 532-BFBGA, FCBGA, Packaging: Bulk, Part Status: Active, Supplier Device Package: 532-FCBGA (23x23), Vgs(th) (Max) @ Id: 1.2V @ 25µA, FET Feature: Logic Level Gate, 2.5V Drive, Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V, Rds On (Max) @ Id, Vgs: 67mOhm @ 4.6A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 1095pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Drain to Source Voltage (Vdss): 20V, Power - Max: 1.6W (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual).