Technische Details BSO303P INFINEON
Description: P-CHANNEL POWER MOSFET, Packaging: Bulk, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 8.2A, Input Capacitance (Ciss) (Max) @ Vds: 1761pF @ 25V, Rds On (Max) @ Id, Vgs: 21mOhm @ 8.2A, 10V, Gate Charge (Qg) (Max) @ Vgs: 72.5nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2V @ 100µA, Supplier Device Package: PG-DSO-8, Part Status: Active.
Weitere Produktangebote BSO303P
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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BSO303P | Infineon Technologies |
Description: P-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.2A Input Capacitance (Ciss) (Max) @ Vds: 1761pF @ 25V Rds On (Max) @ Id, Vgs: 21mOhm @ 8.2A, 10V Gate Charge (Qg) (Max) @ Vgs: 72.5nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 100µA Supplier Device Package: PG-DSO-8 Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
BSO303P | Infineon Technologies |
MOSFETs P-Ch -30V -8.2A DSO-8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BSO303P |
![]() |
Hersteller: Infineon Technologies
Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.2A
Input Capacitance (Ciss) (Max) @ Vds: 1761pF @ 25V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 72.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: PG-DSO-8
Part Status: Active
Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.2A
Input Capacitance (Ciss) (Max) @ Vds: 1761pF @ 25V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 72.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: PG-DSO-8
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSO303P |
![]() |
Hersteller: Infineon Technologies
MOSFETs P-Ch -30V -8.2A DSO-8
MOSFETs P-Ch -30V -8.2A DSO-8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH



