Technische Details BSO303P INFINEON
Description: P-CHANNEL POWER MOSFET, Packaging: Bulk, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 8.2A, Input Capacitance (Ciss) (Max) @ Vds: 1761pF @ 25V, Rds On (Max) @ Id, Vgs: 21mOhm @ 8.2A, 10V, Gate Charge (Qg) (Max) @ Vgs: 72.5nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2V @ 100µA, Supplier Device Package: PG-DSO-8, Part Status: Active.
Weitere Produktangebote BSO303P
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
---|---|---|---|---|---|
BSO303P | Hersteller : INFINEON |
![]() |
auf Bestellung 8280 Stücke: Lieferzeit 21-28 Tag (e) |
||
BSO303P | Hersteller : INFINEON |
![]() |
auf Bestellung 2415 Stücke: Lieferzeit 21-28 Tag (e) |
||
BSO303P | Hersteller : INFINEON? |
![]() |
auf Bestellung 740 Stücke: Lieferzeit 21-28 Tag (e) |
||
![]() |
BSO303P | Hersteller : Infineon Technologies |
![]() |
Produkt ist nicht verfügbar |
|
![]() |
BSO303P | Hersteller : Infineon Technologies |
![]() Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.2A Input Capacitance (Ciss) (Max) @ Vds: 1761pF @ 25V Rds On (Max) @ Id, Vgs: 21mOhm @ 8.2A, 10V Gate Charge (Qg) (Max) @ Vgs: 72.5nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 100µA Supplier Device Package: PG-DSO-8 Part Status: Active |
Produkt ist nicht verfügbar |
|
![]() |
BSO303P | Hersteller : Infineon Technologies |
![]() |
Produkt ist nicht verfügbar |