BSO303PNTMA1 Infineon Technologies


BSO303P.pdf
Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 30V 8.2A 8DSO
Part Status: Obsolete
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 2V @ 100µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 72.5nC @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.2A, 10V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1761pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 8.2A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
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Technische Details BSO303PNTMA1 Infineon Technologies

Description: MOSFET 2P-CH 30V 8.2A 8DSO, Part Status: Obsolete, Supplier Device Package: PG-DSO-8, Vgs(th) (Max) @ Id: 2V @ 100µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 72.5nC @ 10V, Rds On (Max) @ Id, Vgs: 21mOhm @ 8.2A, 10V, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1761pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 8.2A, Drain to Source Voltage (Vdss): 30V, Power - Max: 2W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount.