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BSO303SPHXUMA1 INFINEON TECHNOLOGIES

Name: BSO303SPHXUMA1
Brand: INFINEON TECHNOLOGIES
SKU: 459573017-1
Price: 71.5 EUR
Availability: BackOrder

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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.2A; 1.56W; PG-DSO-8
Mounting: SMD
On-state resistance: 21mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.56W
Polarisation: unipolar
Case: PG-DSO-8
Technology: OptiMOS™ P
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: -30V
Drain current: -7.2A
Anzahl je Verpackung: 1 Stücke

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Technische Details BSO303SPHXUMA1 INFINEON TECHNOLOGIES

Description: MOSFET P-CH 30V 7.2A 8DSO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), Rds On (Max) @ Id, Vgs: 21mOhm @ 9.1A, 10V, Power Dissipation (Max): 1.56W (Ta), Vgs(th) (Max) @ Id: 2V @ 100µA, Supplier Device Package: PG-DSO-8, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 25 V.

Weitere Produktangebote BSO303SPHXUMA1

Bezeichnung	Hersteller	Beschreibung	Verfügbarkeit	Preis
BSO303SPHXUMA1	Hersteller : Infineon Technologies	Description: MOSFET P-CH 30V 7.2A 8DSO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta) Rds On (Max) @ Id, Vgs: 21mOhm @ 9.1A, 10V Power Dissipation (Max): 1.56W (Ta) Vgs(th) (Max) @ Id: 2V @ 100µA Supplier Device Package: PG-DSO-8 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 25 V	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
BSO303SPHXUMA1	Hersteller : Infineon Technologies	Description: MOSFET P-CH 30V 7.2A 8DSO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta) Rds On (Max) @ Id, Vgs: 21mOhm @ 9.1A, 10V Power Dissipation (Max): 1.56W (Ta) Vgs(th) (Max) @ Id: 2V @ 100µA Supplier Device Package: PG-DSO-8 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 25 V	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
BSO303SPHXUMA1	Hersteller : Infineon Technologies	MOSFET TRENCH <= 40V	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
BSO303SPHXUMA1	Hersteller : INFINEON TECHNOLOGIES	Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -7.2A; 1.56W; PG-DSO-8 Mounting: SMD On-state resistance: 21mΩ Type of transistor: P-MOSFET Power dissipation: 1.56W Polarisation: unipolar Case: PG-DSO-8 Technology: OptiMOS™ P Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: -30V Drain current: -7.2A	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH