BSO604NS2XUMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET 2N-CH 55V 5A 8DSO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
Rds On (Max) @ Id, Vgs: 35mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: PG-DSO-8
auf Bestellung 1727 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 355+ | 1.42 EUR |
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Technische Details BSO604NS2XUMA1 Infineon Technologies
Description: MOSFET 2N-CH 55V 5A 8DSO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 55V, Current - Continuous Drain (Id) @ 25°C: 5A, Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V, Rds On (Max) @ Id, Vgs: 35mOhm @ 2.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2V @ 30µA, Supplier Device Package: PG-DSO-8.
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BSO604NS2XUMA1 | Hersteller : Infineon Technologies |
Description: MOSFET 2N-CH 55V 5A 8DSO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 5A Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 2.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 30µA Supplier Device Package: PG-DSO-8 |
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