BSO613SPVGXUMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET P-CH 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.44A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.44A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-DSO-8-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.58 EUR |
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Technische Details BSO613SPVGXUMA1 Infineon Technologies
Description: MOSFET P-CH 8-SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.44A (Ta), Rds On (Max) @ Id, Vgs: 130mOhm @ 3.44A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: PG-DSO-8-6, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote BSO613SPVGXUMA1 nach Preis ab 0.50 EUR bis 2.41 EUR
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BSO613SPVGXUMA1 | Hersteller : Infineon Technologies |
Trans MOSFET P-CH 60V 3.44A Automotive AEC-Q101 8-Pin DSO T/R |
auf Bestellung 2495 Stücke: Lieferzeit 14-21 Tag (e) |
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BSO613SPVGXUMA1 | Hersteller : Infineon Technologies |
Trans MOSFET P-CH 60V 3.44A Automotive AEC-Q101 8-Pin DSO T/R |
auf Bestellung 646 Stücke: Lieferzeit 14-21 Tag (e) |
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BSO613SPVGXUMA1 | Hersteller : Infineon Technologies |
Trans MOSFET P-CH 60V 3.44A Automotive AEC-Q101 8-Pin DSO T/R |
auf Bestellung 653 Stücke: Lieferzeit 14-21 Tag (e) |
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BSO613SPVGXUMA1 | Hersteller : Infineon Technologies |
MOSFETs TRENCH <= 40V |
auf Bestellung 15679 Stücke: Lieferzeit 10-14 Tag (e) |
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BSO613SPVGXUMA1 | Hersteller : Infineon Technologies |
Description: MOSFET P-CH 8-SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.44A (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 3.44A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: PG-DSO-8-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 20465 Stücke: Lieferzeit 10-14 Tag (e) |
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BSO613SPVGXUMA1 Produktcode: 206029
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| BSO613SPVGXUMA1 | Hersteller : Infineon Technologies |
Trans MOSFET P-CH 60V 3.44A T/R |
Produkt ist nicht verfügbar |
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BSO613SPVGXUMA1 | Hersteller : Infineon Technologies |
Trans MOSFET P-CH 60V 3.44A Automotive AEC-Q101 8-Pin DSO T/R |
Produkt ist nicht verfügbar |
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BSO613SPVGXUMA1 | Hersteller : Infineon Technologies |
Trans MOSFET P-CH 60V 3.44A Automotive AEC-Q101 8-Pin DSO T/R |
Produkt ist nicht verfügbar |
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BSO613SPVGXUMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3.44A; Idm: -13.8A; 2.5W; SO8 Mounting: SMD On-state resistance: 0.13Ω Type of transistor: P-MOSFET Power dissipation: 2.5W Polarisation: unipolar Case: SO8 Technology: SIPMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -13.8A Drain-source voltage: -60V Drain current: -3.44A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BSO613SPVGXUMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3.44A; Idm: -13.8A; 2.5W; SO8 Mounting: SMD On-state resistance: 0.13Ω Type of transistor: P-MOSFET Power dissipation: 2.5W Polarisation: unipolar Case: SO8 Technology: SIPMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -13.8A Drain-source voltage: -60V Drain current: -3.44A |
Produkt ist nicht verfügbar |