BSO613SPVGXUMA1
Produktcode: 206029
zu Favoriten hinzufügen
Lieblingsprodukt
Hersteller:
Transistoren > Transistoren P-Kanal-Feld
Produktrezensionen
Produktbewertung abgeben
Weitere Produktangebote BSO613SPVGXUMA1 nach Preis ab 0.56 EUR bis 2.36 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
BSO613SPVGXUMA1 | Infineon Technologies |
Description: MOSFET P-CH 8-SOIC Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-DSO-8-6 Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 3.44A, 10V Current - Continuous Drain (Id) @ 25°C: 3.44A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
 |
BSO613SPVGXUMA1 | Infineon Technologies |
MOSFETs TRENCH <= 40V |
auf Bestellung 15679 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
|
|
BSO613SPVGXUMA1 | Infineon Technologies |
Description: MOSFET P-CH 8-SOIC Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-DSO-8-6 Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 3.44A, 10V Current - Continuous Drain (Id) @ 25°C: 3.44A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 17005 Stücke: Lieferzeit 10-14 Tag (e) |
|
| BSO613SPVGXUMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET P-CH 8-SOIC
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-DSO-8-6
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.44A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.44A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 8-SOIC
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-DSO-8-6
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.44A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.44A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.56 EUR |
| BSO613SPVGXUMA1 |
|
Hersteller: Infineon Technologies
MOSFETs TRENCH <= 40V
MOSFETs TRENCH <= 40V
auf Bestellung 15679 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.66 EUR |
| 10+ | 1.15 EUR |
| 100+ | 0.77 EUR |
| 500+ | 0.65 EUR |
| BSO613SPVGXUMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET P-CH 8-SOIC
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-DSO-8-6
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.44A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.44A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 8-SOIC
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-DSO-8-6
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.44A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.44A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 17005 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 2.36 EUR |
| 12+ | 1.49 EUR |
| 100+ | 0.82 EUR |
| 500+ | 0.73 EUR |
| 1000+ | 0.71 EUR |