| Anzahl | Preis |
|---|---|
| 2+ | 1.56 EUR |
| 10+ | 1.32 EUR |
| 100+ | 1.09 EUR |
| 500+ | 0.91 EUR |
| 1000+ | 0.77 EUR |
| 2500+ | 0.69 EUR |
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Technische Details BSO615NGXUMA1 Infineon Technologies
Description: MOSFET 2N-CH 60V 2.6A 8DSO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 2.6A, Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V, Rds On (Max) @ Id, Vgs: 150mOhm @ 2.6A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2V @ 20µA, Supplier Device Package: PG-DSO-8, Grade: Automotive, Part Status: Last Time Buy, Qualification: AEC-Q101.
Weitere Produktangebote BSO615NGXUMA1 nach Preis ab 0.85 EUR bis 2.78 EUR
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BSO615NGXUMA1 | Infineon Technologies |
 Description: MOSFET 2N-CH 60V 2.6A 8DSOQualification: AEC-Q101 Grade: Automotive Supplier Device Package: PG-DSO-8 Vgs(th) (Max) @ Id: 2V @ 20µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Rds On (Max) @ Id, Vgs: 150mOhm @ 2.6A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V Current - Continuous Drain (Id) @ 25°C: 2.6A Drain to Source Voltage (Vdss): 60V Power - Max: 2W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Part Status: Last Time Buy |
auf Bestellung 2155 Stücke: Lieferzeit 10-14 Tag (e) |
|
| BSO615NGXUMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 60V 2.6A 8DSO
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 2V @ 20µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.6A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Drain to Source Voltage (Vdss): 60V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Last Time Buy
Description: MOSFET 2N-CH 60V 2.6A 8DSO
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 2V @ 20µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.6A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Drain to Source Voltage (Vdss): 60V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Last Time Buy
auf Bestellung 2155 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.78 EUR |
| 11+ | 1.76 EUR |
| 100+ | 1.18 EUR |
| 500+ | 0.93 EUR |
| 1000+ | 0.85 EUR |