BSP 50 E6327 Infineon Technologies
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Technische Details BSP 50 E6327 Infineon Technologies
Description: TRANS NPN DARL 45V 1A SOT223-4, Packaging: Bulk, Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Transistor Type: NPN - Darlington, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A, Current - Collector Cutoff (Max): 10µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V, Frequency - Transition: 200MHz, Supplier Device Package: PG-SOT223-4, Part Status: Active, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 45 V, Power - Max: 1.5 W.
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BSP50E6327 | Hersteller : Infineon Technologies |
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BSP50E6327 | Hersteller : Infineon Technologies |
Description: TRANS NPN DARL 45V 1A SOT223-4 Packaging: Bulk Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V Frequency - Transition: 200MHz Supplier Device Package: PG-SOT223-4 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 1.5 W |
Produkt ist nicht verfügbar |