BSP129L6327HTSA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 985+ | 0.56 EUR |
| 1068+ | 0.51 EUR |
| 10000+ | 0.44 EUR |
| 100000+ | 0.36 EUR |
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Technische Details BSP129L6327HTSA1 Infineon Technologies
Description: MOSFET N-CH 240V 350MA SOT223-4, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Depletion Mode, Current - Continuous Drain (Id) @ 25°C: 350mA (Ta), Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V, Power Dissipation (Max): 1.8W (Ta), Vgs(th) (Max) @ Id: 1V @ 108µA, Supplier Device Package: PG-SOT223-4-21, Grade: Automotive, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 0V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 240 V, Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 108 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote BSP129L6327HTSA1 nach Preis ab 0.64 EUR bis 0.64 EUR
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BSP129L6327HTSA1 | Infineon Technologies |
 Description: MOSFET N-CH 240V 350MA SOT223-4Packaging: Bulk Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel, Depletion Mode Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 1V @ 108µA Supplier Device Package: PG-SOT223-4-21 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 240 V Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 108 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 236388 Stücke: Lieferzeit 10-14 Tag (e) |
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| BSP129L6327HTSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 240V 350MA SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 108µA
Supplier Device Package: PG-SOT223-4-21
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 108 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 240V 350MA SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 108µA
Supplier Device Package: PG-SOT223-4-21
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 108 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 236388 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 709+ | 0.64 EUR |