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BSP129L6327HTSA1

BSP129L6327HTSA1 Infineon Technologies


Infineon-BSP129-DS-v01_42-en.pdf?fileId=db3a30433c1a8752013c1fc296d2395f Hersteller: Infineon Technologies
Description: MOSFET N-CH 240V 350MA SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 108µA
Supplier Device Package: PG-SOT223-4-21
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 108 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 237893 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
655+0.71 EUR
Mindestbestellmenge: 655
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details BSP129L6327HTSA1 Infineon Technologies

Description: MOSFET N-CH 240V 350MA SOT223-4, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Depletion Mode, Current - Continuous Drain (Id) @ 25°C: 350mA (Ta), Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V, Power Dissipation (Max): 1.8W (Ta), Vgs(th) (Max) @ Id: 1V @ 108µA, Supplier Device Package: PG-SOT223-4-21, Grade: Automotive, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 0V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 240 V, Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 108 pF @ 25 V, Qualification: AEC-Q101.

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BSP129L6327HTSA1 BSP129L6327HTSA1 Hersteller : Infineon Technologies bsp129_rev1.42.pdf Trans MOSFET N-CH 240V 0.35A Automotive 4-Pin(3+Tab) SOT-223 T/R
auf Bestellung 237893 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
757+0.72 EUR
1000+0.64 EUR
10000+0.55 EUR
100000+0.45 EUR
Mindestbestellmenge: 757
Im Einkaufswagen  Stück im Wert von  UAH
BSP129L6327HTSA1 BSP129L6327HTSA1 Hersteller : Infineon Technologies bsp129_rev1.42.pdf Trans MOSFET N-CH 240V 0.35A Automotive 4-Pin(3+Tab) SOT-223 T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSP129L6327HTSA1 Hersteller : ROCHESTER ELECTRONICS Infineon-BSP129-DS-v01_42-en.pdf?fileId=db3a30433c1a8752013c1fc296d2395f Description: ROCHESTER ELECTRONICS - BSP129L6327HTSA1 - BSP129 0.35A, 240V, NCHANEL POWER MOSFET
tariffCode: 85412900
euEccn: TBC
hazardous: false
productTraceability: No
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSP129L6327HTSA1 BSP129L6327HTSA1 Hersteller : Infineon Technologies Infineon-BSP129-DS-v01_42-en.pdf?fileId=db3a30433c1a8752013c1fc296d2395f Description: MOSFET N-CH 240V 350MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 108µA
Supplier Device Package: PG-SOT223-4-21
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 108 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH