BSP171IATMA1 Infineon Technologies
auf Bestellung 2983 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 0.95 EUR |
| 10+ | 0.72 EUR |
| 100+ | 0.54 EUR |
| 500+ | 0.42 EUR |
| 1000+ | 0.33 EUR |
| 2500+ | 0.30 EUR |
| 5000+ | 0.28 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BSP171IATMA1 Infineon Technologies
Description: BSP171IATMA1, Packaging: Tape & Reel (TR), Package / Case: TO-261-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta), 3.2A (Tc), Rds On (Max) @ Id, Vgs: 250mOhm @ 1.9A, 10V, Power Dissipation (Max): 1.8W (Ta), 5W (Tc), Vgs(th) (Max) @ Id: 2V @ 270µA, Supplier Device Package: PG-SOT223-4-U01, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 30 V.
Weitere Produktangebote BSP171IATMA1 nach Preis ab 0.28 EUR bis 1.20 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BSP171IATMA1 | Hersteller : Infineon Technologies |
 Description: BSP171IATMA1Packaging: Tape & Reel (TR) Package / Case: TO-261-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta), 3.2A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 1.9A, 10V Power Dissipation (Max): 1.8W (Ta), 5W (Tc) Vgs(th) (Max) @ Id: 2V @ 270µA Supplier Device Package: PG-SOT223-4-U01 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 30 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
| BSP171IATMA1 | Hersteller : Infineon Technologies |
Description: BSP171IATMA1 Packaging: Cut Tape (CT) Package / Case: TO-261-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta), 3.2A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 1.9A, 10V Power Dissipation (Max): 1.8W (Ta), 5W (Tc) Vgs(th) (Max) @ Id: 2V @ 270µA Supplier Device Package: PG-SOT223-4-U01 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 30 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|