BSP179H6327XTSA1 Infineon Technologies
Hersteller: Infineon TechnologiesTrans MOSFET N-CH 400V 0.21A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101
auf Bestellung 41068 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 647+ | 0.85 EUR |
| 1000+ | 0.75 EUR |
| 10000+ | 0.65 EUR |
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Technische Details BSP179H6327XTSA1 Infineon Technologies
Description: MOSFET N-CH 400V 210MA SOT223-4, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Depletion Mode, Current - Continuous Drain (Id) @ 25°C: 210mA (Ta), Rds On (Max) @ Id, Vgs: 18Ohm @ 210mA, 10V, Power Dissipation (Max): 1.8W (Ta), Vgs(th) (Max) @ Id: 1V @ 94µA, Supplier Device Package: PG-SOT223-4, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 0V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 400 V, Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BSP179H6327XTSA1 nach Preis ab 0.97 EUR bis 0.97 EUR
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BSP179H6327XTSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 400V 210MA SOT223-4 Packaging: Bulk Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel, Depletion Mode Current - Continuous Drain (Id) @ 25°C: 210mA (Ta) Rds On (Max) @ Id, Vgs: 18Ohm @ 210mA, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 1V @ 94µA Supplier Device Package: PG-SOT223-4 Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 40640 Stücke: Lieferzeit 10-14 Tag (e) |
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| BSP179H6327XTSA1 | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - BSP179H6327XTSA1 - BSP179 SIPMOS, SMALL SIGNAL N-CHANNEL tariffCode: 85412100 euEccn: TBC hazardous: false productTraceability: No usEccn: TBC SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 40640 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP179H6327XTSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 400V 210MA SOT223-4 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel, Depletion Mode Current - Continuous Drain (Id) @ 25°C: 210mA (Ta) Rds On (Max) @ Id, Vgs: 18Ohm @ 210mA, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 1V @ 94µA Supplier Device Package: PG-SOT223-4 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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BSP179H6327XTSA1 | Hersteller : Infineon Technologies |
MOSFET SMALL SIGNAL MOSFETS |
Produkt ist nicht verfügbar |