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BSP179H6327XTSA1

BSP179H6327XTSA1 Infineon Technologies


BSP179.pdf Hersteller: Infineon Technologies
Description: MOSFET N-CH 400V 210MA SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
Rds On (Max) @ Id, Vgs: 18Ohm @ 210mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 94µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 40640 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
561+0.83 EUR
Mindestbestellmenge: 561
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details BSP179H6327XTSA1 Infineon Technologies

Description: MOSFET N-CH 400V 210MA SOT223-4, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Depletion Mode, Current - Continuous Drain (Id) @ 25°C: 210mA (Ta), Rds On (Max) @ Id, Vgs: 18Ohm @ 210mA, 10V, Power Dissipation (Max): 1.8W (Ta), Vgs(th) (Max) @ Id: 1V @ 94µA, Supplier Device Package: PG-SOT223-4, Grade: Automotive, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 0V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 400 V, Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 25 V, Qualification: AEC-Q101.

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BSP179H6327XTSA1 BSP179H6327XTSA1 Hersteller : Infineon Technologies 574infineon-bsp179-ds-v02_00-en.pdffileid5546d46250cc1fdf0151489110d.pdf Trans MOSFET N-CH 400V 0.21A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101
auf Bestellung 41068 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
648+0.85 EUR
1000+0.75 EUR
10000+0.65 EUR
Mindestbestellmenge: 648
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BSP179H6327XTSA1 Hersteller : ROCHESTER ELECTRONICS BSP179.pdf Description: ROCHESTER ELECTRONICS - BSP179H6327XTSA1 - BSP179 SIPMOS, SMALL SIGNAL N-CHANNEL
tariffCode: 85412100
euEccn: TBC
hazardous: false
productTraceability: No
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 40640 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
BSP179H6327XTSA1 BSP179H6327XTSA1 Hersteller : Infineon Technologies BSP179.pdf Description: MOSFET N-CH 400V 210MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
Rds On (Max) @ Id, Vgs: 18Ohm @ 210mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 94µA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSP179H6327XTSA1 BSP179H6327XTSA1 Hersteller : Infineon Technologies Infineon-BSP179-DS-v02_00-EN-1731227.pdf MOSFET SMALL SIGNAL MOSFETS
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH