BSP250,135 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 30V 3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V
Power Dissipation (Max): 1.65W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: SOT-223
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 20 V
| Anzahl | Preis |
|---|---|
| 12+ | 1.55 EUR |
| 19+ | 0.97 EUR |
| 100+ | 0.63 EUR |
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Technische Details BSP250,135 Nexperia USA Inc.
Description: MOSFET P-CH 30V 3A SOT223, Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Not For New Designs, Supplier Device Package: SOT-223, Vgs(th) (Max) @ Id: 2.8V @ 1mA, Power Dissipation (Max): 1.65W (Ta), Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR).
Weitere Produktangebote BSP250,135
| Foto | Bezeichnung | Hersteller | Beschreibung |
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|---|---|---|---|---|---|
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BSP250,135 | Nexperia USA Inc. |
Description: MOSFET P-CH 30V 3A SOT223 Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: SOT-223 Vgs(th) (Max) @ Id: 2.8V @ 1mA Power Dissipation (Max): 1.65W (Ta) Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
BSP250,135 | Nexperia |
MOSFETs BSP250/SOT223/SC-73 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BSP250,135 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 30V 3A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 1.65W (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 30V 3A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 1.65W (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSP250,135 |
|
Hersteller: Nexperia
MOSFETs BSP250/SOT223/SC-73
MOSFETs BSP250/SOT223/SC-73
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH