BSP250,135 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 30V 3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V
Power Dissipation (Max): 1.65W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: SOT-223
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 20 V
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.84 EUR |
| 19+ | 1.15 EUR |
| 100+ | 0.75 EUR |
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Technische Details BSP250,135 Nexperia USA Inc.
Description: MOSFET P-CH 30V 3A SOT223, Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Not For New Designs, Supplier Device Package: SOT-223, Vgs(th) (Max) @ Id: 2.8V @ 1mA, Power Dissipation (Max): 1.65W (Ta), Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR).
Weitere Produktangebote BSP250,135
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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BSP250,135 | Nexperia |
Trans MOSFET P-CH 30V 3A 4-Pin(3+Tab) SC-73 T/R |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH |
| BSP250,135 |
|
Hersteller: Nexperia
Trans MOSFET P-CH 30V 3A 4-Pin(3+Tab) SC-73 T/R
Trans MOSFET P-CH 30V 3A 4-Pin(3+Tab) SC-73 T/R
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)