BSP295H6327XTSA1 Infineon
auf Bestellung 1000 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 100+ | 0.96 EUR |
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Technische Details BSP295H6327XTSA1 Infineon
Description: MOSFET N-CH 60V 1.8A SOT223-4, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta), Rds On (Max) @ Id, Vgs: 300mOhm @ 1.8A, 10V, Power Dissipation (Max): 1.8W (Ta), Vgs(th) (Max) @ Id: 1.8V @ 400µA, Supplier Device Package: PG-SOT223-4, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 368 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote BSP295H6327XTSA1 nach Preis ab 0.43 EUR bis 1.94 EUR
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BSP295H6327XTSA1 | Infineon Technologies |
 MOSFETs N-Ch 60V 1.8A SOT-223-3 |
auf Bestellung 611 Stücke: Lieferzeit 10-14 Tag (e) |
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BSP295H6327XTSA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 1.8A SOT223-4 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 1.8A, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 1.8V @ 400µA Supplier Device Package: PG-SOT223-4 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 368 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 368 Stücke: Lieferzeit 10-14 Tag (e) |
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| BSP295H6327XTSA1 |
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Hersteller: Infineon Technologies
MOSFETs N-Ch 60V 1.8A SOT-223-3
MOSFETs N-Ch 60V 1.8A SOT-223-3
auf Bestellung 611 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.78 EUR |
| 10+ | 1.1 EUR |
| 100+ | 0.73 EUR |
| 500+ | 0.58 EUR |
| 1000+ | 0.5 EUR |
| 2000+ | 0.43 EUR |
| BSP295H6327XTSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 1.8A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.8A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 368 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 1.8A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.8A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 368 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 368 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 1.94 EUR |
| 15+ | 1.22 EUR |
| 100+ | 0.8 EUR |