BSP296L6433 Infineon Technologies

Description: SMALL-SIGNAL N-CHANNEL MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PG-SOT223, Vgs(th) (Max) @ Id: 1.8V @ 400µA, Power Dissipation (Max): 1.79W (Ta), Rds On (Max) @ Id, Vgs: 700mOhm @ 1.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Bulk.