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BSP296NH6433XTMA1

BSP296NH6433XTMA1 Infineon Technologies

BSP296N_rev2+0.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30433dd58def013dd5af675d001f
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 1.2A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.2A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 100µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 152.7 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4000+0.38 EUR
8000+0.35 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details BSP296NH6433XTMA1 Infineon Technologies

Description: MOSFET N-CH 100V 1.2A SOT223-4, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), Rds On (Max) @ Id, Vgs: 600mOhm @ 1.2A, 10V, Power Dissipation (Max): 1.8W (Ta), Vgs(th) (Max) @ Id: 1.8V @ 100µA, Supplier Device Package: PG-SOT223-4, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 152.7 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote BSP296NH6433XTMA1 nach Preis ab 0.39 EUR bis 1.8 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
BSP296NH6433XTMA1 BSP296NH6433XTMA1 Infineon Technologies Infineon-BSP296N-DS-v02_00-en.pdf MOSFETs SMALL SIGNAL N-CH
auf Bestellung 3193 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.64 EUR
10+1.02 EUR
100+0.67 EUR
500+0.52 EUR
1000+0.47 EUR
2000+0.43 EUR
4000+0.39 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSP296NH6433XTMA1 BSP296NH6433XTMA1 Infineon Technologies BSP296N_rev2+0.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30433dd58def013dd5af675d001f Description: MOSFET N-CH 100V 1.2A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.2A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 100µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 152.7 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 11803 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.8 EUR
16+1.12 EUR
100+0.73 EUR
500+0.57 EUR
1000+0.51 EUR
2000+0.47 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSP296NH6433XTMA1 Infineon-BSP296N-DS-v02_00-en.pdf
BSP296NH6433XTMA1
Hersteller: Infineon Technologies
MOSFETs SMALL SIGNAL N-CH
auf Bestellung 3193 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+1.64 EUR
10+1.02 EUR
100+0.67 EUR
500+0.52 EUR
1000+0.47 EUR
2000+0.43 EUR
4000+0.39 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSP296NH6433XTMA1 BSP296N_rev2+0.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30433dd58def013dd5af675d001f
BSP296NH6433XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 1.2A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.2A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 100µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 152.7 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 11803 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
10+1.8 EUR
16+1.12 EUR
100+0.73 EUR
500+0.57 EUR
1000+0.51 EUR
2000+0.47 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH