BSP300L6327HUSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 190MA SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-SOT223-4-21
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 20Ohm @ 190mA, 10V
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
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Technische Details BSP300L6327HUSA1 Infineon Technologies
Description: MOSFET N-CH 800V 190MA SOT223-4, Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: PG-SOT223-4-21, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 1.8W (Ta), Rds On (Max) @ Id, Vgs: 20Ohm @ 190mA, 10V, Current - Continuous Drain (Id) @ 25°C: 190mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR).