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BSP316PH6327XTSA1

BSP316PH6327XTSA1 Infineon Technologies

Infineon-BSP316P-DS-v01_08-en.pdf?fileId=db3a30433b47825b013b603f524159c2
Hersteller: Infineon Technologies
Description: MOSFET P-CH 100V 680MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 680mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 170µA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 146 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1000+0.43 EUR
2000+0.39 EUR
3000+0.38 EUR
5000+0.35 EUR
7000+0.34 EUR
10000+0.33 EUR
25000+0.31 EUR
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details BSP316PH6327XTSA1 Infineon Technologies

Description: MOSFET P-CH 100V 680MA SOT223-4, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 680mA (Ta), Rds On (Max) @ Id, Vgs: 1.8Ohm @ 680mA, 10V, Power Dissipation (Max): 1.8W (Ta), Vgs(th) (Max) @ Id: 2V @ 170µA, Supplier Device Package: PG-SOT223-4, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 146 pF @ 25 V, Qualification: AEC-Q101.

Weitere Produktangebote BSP316PH6327XTSA1 nach Preis ab 0.33 EUR bis 1.87 EUR

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BSP316PH6327XTSA1 BSP316PH6327XTSA1 INFINEON TECHNOLOGIES BSP316PH6327XTSA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.68A; 1.8W; PG-SOT223
Type of transistor: P-MOSFET
Mounting: SMD
Technology: SIPMOS™
Drain-source voltage: -100V
Drain current: -680mA
Power dissipation: 1.8W
On-state resistance: 1.8Ω
Gate-source voltage: ±20V
Polarisation: unipolar
Case: PG-SOT223
Kind of channel: enhancement
auf Bestellung 679 Stücke:
Lieferzeit 14-21 Tag (e)
103+0.7 EUR
145+0.49 EUR
167+0.43 EUR
176+0.41 EUR
179+0.4 EUR
250+0.38 EUR
500+0.33 EUR
Mindestbestellmenge: 103 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSP316PH6327XTSA1 BSP316PH6327XTSA1 Infineon Technologies Infineon-BSP316P-DS-v01_08-en.pdf?fileId=db3a30433b47825b013b603f524159c2 Description: MOSFET P-CH 100V 680MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 680mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 170µA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 146 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 25301 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.51 EUR
19+0.95 EUR
100+0.62 EUR
500+0.48 EUR
Mindestbestellmenge: 12 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSP316PH6327XTSA1 BSP316PH6327XTSA1 Infineon Technologies Infineon_BSP316P_DS_v02_00_EN.pdf MOSFETs P-Ch -100V -680mA SOT-223-3
auf Bestellung 36190 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.87 EUR
10+1.15 EUR
100+0.76 EUR
500+0.6 EUR
1000+0.52 EUR
2000+0.46 EUR
5000+0.41 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSP316PH6327XTSA1 BSP316PH6327XTSA1-dte.pdf
BSP316PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.68A; 1.8W; PG-SOT223
Type of transistor: P-MOSFET
Mounting: SMD
Technology: SIPMOS™
Drain-source voltage: -100V
Drain current: -680mA
Power dissipation: 1.8W
On-state resistance: 1.8Ω
Gate-source voltage: ±20V
Polarisation: unipolar
Case: PG-SOT223
Kind of channel: enhancement
auf Bestellung 679 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
103+0.7 EUR
145+0.49 EUR
167+0.43 EUR
176+0.41 EUR
179+0.4 EUR
250+0.38 EUR
500+0.33 EUR
Mindestbestellmenge: 103 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSP316PH6327XTSA1 Infineon-BSP316P-DS-v01_08-en.pdf?fileId=db3a30433b47825b013b603f524159c2
BSP316PH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 100V 680MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 680mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 170µA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 146 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 25301 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
12+1.51 EUR
19+0.95 EUR
100+0.62 EUR
500+0.48 EUR
Mindestbestellmenge: 12 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSP316PH6327XTSA1 Infineon_BSP316P_DS_v02_00_EN.pdf
BSP316PH6327XTSA1
Hersteller: Infineon Technologies
MOSFETs P-Ch -100V -680mA SOT-223-3
auf Bestellung 36190 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+1.87 EUR
10+1.15 EUR
100+0.76 EUR
500+0.6 EUR
1000+0.52 EUR
2000+0.46 EUR
5000+0.41 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH