BSP317PE6327 Infineon Technologies

Description: MOSFET P-CH 250V 430MA SOT223-4, Input Capacitance (Ciss) (Max) @ Vds: 262 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V, Drain to Source Voltage (Vdss): 250 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: PG-SOT223-4, Vgs(th) (Max) @ Id: 2V @ 370µA, Power Dissipation (Max): 1.8W (Ta), Rds On (Max) @ Id, Vgs: 4Ohm @ 430mA, 10V, Current - Continuous Drain (Id) @ 25°C: 430mA (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR).