BSP317PH6327XTSA1 Infineon Technologies
Hersteller: Infineon Technologies
Trans MOSFET P-CH 250V 0.43A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101
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Technische Details BSP317PH6327XTSA1 Infineon Technologies
Description: INFINEON - BSP317PH6327XTSA1 - Leistungs-MOSFET, p-Kanal, 250 V, 430 mA, 3 ohm, SOT-223, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 250V, rohsCompliant: YES, Dauer-Drainstrom Id: 430mA, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, isCanonical: Y, MSL: MSL 1 - unbegrenzt, Gate-Source-Schwellenspannung, max.: 1.5V, Verlustleistung: 1.8W, SVHC: No SVHC (25-Jun-2025), Bauform - Transistor: SOT-223, Anzahl der Pins: 4Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: p-Kanal, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 3ohm.
Weitere Produktangebote BSP317PH6327XTSA1 nach Preis ab 0.44 EUR bis 2.65 EUR
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BSP317PH6327XTSA1 | Infineon Technologies |
Trans MOSFET P-CH 250V 0.43A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP317PH6327XTSA1 | Infineon Technologies |
Description: MOSFET P-CH 250V 430MA SOT223-4 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 430mA (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 430mA, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 2V @ 370µA Supplier Device Package: PG-SOT223-4 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 262 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSP317PH6327XTSA1 | Infineon Technologies |
Trans MOSFET P-CH 250V 0.43A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101 |
auf Bestellung 1995 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP317PH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -250V; -0.43A; 1.8W; PG-SOT223 Mounting: SMD Power dissipation: 1.8W Polarisation: unipolar Technology: SIPMOS™ Drain current: -0.43A Kind of channel: enhancement Drain-source voltage: -250V Type of transistor: P-MOSFET Gate-source voltage: ±20V Case: PG-SOT223 On-state resistance: 4Ω |
auf Bestellung 1520 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP317PH6327XTSA1 | Infineon Technologies |
Description: MOSFET P-CH 250V 430MA SOT223-4 Input Capacitance (Ciss) (Max) @ Vds: 262 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PG-SOT223-4 Vgs(th) (Max) @ Id: 2V @ 370µA Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 430mA, 10V Current - Continuous Drain (Id) @ 25°C: 430mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
auf Bestellung 5096 Stücke: Lieferzeit 10-14 Tag (e) |
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BSP317PH6327XTSA1 | Infineon Technologies |
MOSFETs P-Ch -250V -430mA SOT-223-3 |
auf Bestellung 2490 Stücke: Lieferzeit 10-14 Tag (e) |
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BSP317PH6327XTSA1 | INFINEON |
Description: INFINEON - BSP317PH6327XTSA1 - Leistungs-MOSFET, p-Kanal, 250 V, 430 mA, 3 ohm, SOT-223, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 250V rohsCompliant: YES Dauer-Drainstrom Id: 430mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 1.5V Verlustleistung: 1.8W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: SOT-223 Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: p-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 3ohm |
auf Bestellung 2263 Stücke: Lieferzeit 14-21 Tag (e) |
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Hersteller: Infineon Technologies
Trans MOSFET P-CH 250V 0.43A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101
Trans MOSFET P-CH 250V 0.43A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 0.54 EUR |
| 2000+ | 0.48 EUR |
| BSP317PH6327XTSA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET P-CH 250V 430MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 430mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 370µA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 262 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET P-CH 250V 430MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 430mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 370µA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 262 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 0.61 EUR |
| 2000+ | 0.56 EUR |
| 3000+ | 0.54 EUR |
| 5000+ | 0.5 EUR |
| BSP317PH6327XTSA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET P-CH 250V 0.43A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101
Trans MOSFET P-CH 250V 0.43A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101
auf Bestellung 1995 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 155+ | 1.13 EUR |
| 176+ | 0.98 EUR |
| 204+ | 0.82 EUR |
| 213+ | 0.77 EUR |
| 500+ | 0.68 EUR |
| 1000+ | 0.61 EUR |
| BSP317PH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.43A; 1.8W; PG-SOT223
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: -0.43A
Kind of channel: enhancement
Drain-source voltage: -250V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Case: PG-SOT223
On-state resistance: 4Ω
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.43A; 1.8W; PG-SOT223
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: -0.43A
Kind of channel: enhancement
Drain-source voltage: -250V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Case: PG-SOT223
On-state resistance: 4Ω
auf Bestellung 1520 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 57+ | 1.5 EUR |
| 91+ | 0.94 EUR |
| 138+ | 0.62 EUR |
| 500+ | 0.48 EUR |
| 1000+ | 0.44 EUR |
| BSP317PH6327XTSA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET P-CH 250V 430MA SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 262 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 2V @ 370µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 430mA, 10V
Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET P-CH 250V 430MA SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 262 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 2V @ 370µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 430mA, 10V
Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 5096 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.09 EUR |
| 16+ | 1.32 EUR |
| 100+ | 0.87 EUR |
| 500+ | 0.67 EUR |
| BSP317PH6327XTSA1 |
|
Hersteller: Infineon Technologies
MOSFETs P-Ch -250V -430mA SOT-223-3
MOSFETs P-Ch -250V -430mA SOT-223-3
auf Bestellung 2490 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.49 EUR |
| 10+ | 1.54 EUR |
| 100+ | 1.01 EUR |
| 500+ | 0.8 EUR |
| 1000+ | 0.68 EUR |
| 2000+ | 0.6 EUR |
| 5000+ | 0.55 EUR |
| BSP317PH6327XTSA1 |
|
Hersteller: INFINEON
Description: INFINEON - BSP317PH6327XTSA1 - Leistungs-MOSFET, p-Kanal, 250 V, 430 mA, 3 ohm, SOT-223, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 250V
rohsCompliant: YES
Dauer-Drainstrom Id: 430mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 1.5V
Verlustleistung: 1.8W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOT-223
Anzahl der Pins: 4Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 3ohm
Description: INFINEON - BSP317PH6327XTSA1 - Leistungs-MOSFET, p-Kanal, 250 V, 430 mA, 3 ohm, SOT-223, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 250V
rohsCompliant: YES
Dauer-Drainstrom Id: 430mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 1.5V
Verlustleistung: 1.8W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: SOT-223
Anzahl der Pins: 4Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 3ohm
auf Bestellung 2263 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 95+ | 2.65 EUR |
| 152+ | 1.52 EUR |
| 233+ | 0.92 EUR |
| 500+ | 0.71 EUR |
| 1000+ | 0.64 EUR |