BSP317PH6327XTSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET P-CH 250V 430MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 430mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 370µA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 262 pF @ 25 V
Qualification: AEC-Q101
| Anzahl | Preis |
|---|---|
| 1000+ | 0.51 EUR |
| 2000+ | 0.47 EUR |
| 3000+ | 0.45 EUR |
| 5000+ | 0.42 EUR |
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Technische Details BSP317PH6327XTSA1 Infineon Technologies
Description: MOSFET P-CH 250V 430MA SOT223-4, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 430mA (Ta), Rds On (Max) @ Id, Vgs: 4Ohm @ 430mA, 10V, Power Dissipation (Max): 1.8W (Ta), Vgs(th) (Max) @ Id: 2V @ 370µA, Supplier Device Package: PG-SOT223-4, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 262 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote BSP317PH6327XTSA1 nach Preis ab 0.4 EUR bis 1.76 EUR
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BSP317PH6327XTSA1 | Infineon Technologies |
MOSFETs P-Ch -250V -430mA SOT-223-3 |
auf Bestellung 18728 Stücke: Lieferzeit 10-14 Tag (e) |
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BSP317PH6327XTSA1 | Infineon Technologies |
Description: MOSFET P-CH 250V 430MA SOT223-4 Input Capacitance (Ciss) (Max) @ Vds: 262 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PG-SOT223-4 Vgs(th) (Max) @ Id: 2V @ 370µA Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 430mA, 10V Current - Continuous Drain (Id) @ 25°C: 430mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
auf Bestellung 5096 Stücke: Lieferzeit 10-14 Tag (e) |
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| BSP317PH6327XTSA1 |
|
Hersteller: Infineon Technologies
MOSFETs P-Ch -250V -430mA SOT-223-3
MOSFETs P-Ch -250V -430mA SOT-223-3
auf Bestellung 18728 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.72 EUR |
| 10+ | 1.1 EUR |
| 100+ | 0.73 EUR |
| 500+ | 0.56 EUR |
| 1000+ | 0.51 EUR |
| 2000+ | 0.42 EUR |
| 5000+ | 0.4 EUR |
| BSP317PH6327XTSA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET P-CH 250V 430MA SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 262 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 2V @ 370µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 430mA, 10V
Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET P-CH 250V 430MA SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 262 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 2V @ 370µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 430mA, 10V
Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 5096 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 1.76 EUR |
| 16+ | 1.11 EUR |
| 100+ | 0.73 EUR |
| 500+ | 0.56 EUR |