BSP317PL6327HTSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET P-CH 250V 430MA SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 262 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-SOT223-4-21
Vgs(th) (Max) @ Id: 2V @ 370µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 430mA, 10V
Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produktrezensionen
Produktbewertung abgeben
Technische Details BSP317PL6327HTSA1 Infineon Technologies
Description: MOSFET P-CH 250V 430MA SOT223-4, Input Capacitance (Ciss) (Max) @ Vds: 262 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V, Drain to Source Voltage (Vdss): 250 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: PG-SOT223-4-21, Vgs(th) (Max) @ Id: 2V @ 370µA, Power Dissipation (Max): 1.8W (Ta), Rds On (Max) @ Id, Vgs: 4Ohm @ 430mA, 10V, Current - Continuous Drain (Id) @ 25°C: 430mA (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR).