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BSP320SH6433XTMA1 Infineon Technologies


Infineon_BSP320S_DataSheet_v02_05_EN-240674.pdf
Hersteller: Infineon Technologies
MOSFET SIPMOS Sm-Signal 60V 120mOhm 2.9A
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Technische Details BSP320SH6433XTMA1 Infineon Technologies

Description: MOSFET N-CH 60V 2.9A SOT223, Grade: Automotive, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 7 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Last Time Buy, Supplier Device Package: SOT-223, Vgs(th) (Max) @ Id: 4V @ 20µA, Power Dissipation (Max): 1.8W (Ta), Rds On (Max) @ Id, Vgs: 120mOhm @ 2.9A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.9A (Tj).

Weitere Produktangebote BSP320SH6433XTMA1

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
BSP320SH6433XTMA1 BSP320SH6433XTMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH 60V 2.9A SOT223
Grade: Automotive
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 7 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 20µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tj)
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSP320SH6433XTMA1 fundamentals-of-power-semiconductors
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 2.9A SOT223
Grade: Automotive
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 7 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 20µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tj)
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH