BSP324H6327XTSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 400V 170MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 25Ohm @ 170mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 94µA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 154 pF @ 25 V
Qualification: AEC-Q101
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Technische Details BSP324H6327XTSA1 Infineon Technologies
Description: INFINEON - BSP324H6327XTSA1 - Leistungs-MOSFET, n-Kanal, 400 V, 170 mA, 25 ohm, SOT-223, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 400V, rohsCompliant: YES, Dauer-Drainstrom Id: 170mA, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, isCanonical: Y, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 1.9V, euEccn: NLR, Verlustleistung: 1.8W, Bauform - Transistor: SOT-223, Anzahl der Pins: 4Pin(s), Produktpalette: SIPMOS, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 25ohm, SVHC: No SVHC (25-Jun-2025).
Weitere Produktangebote BSP324H6327XTSA1 nach Preis ab 0.36 EUR bis 1.65 EUR
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BSP324H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 0.17A; 1.8W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 0.17A Power dissipation: 1.8W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 25Ω Mounting: SMD Kind of channel: enhancement Technology: SIPMOS™ |
auf Bestellung 278 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP324H6327XTSA1 | Infineon Technologies |
MOSFETs N-Ch 400V 170mA SOT-223-3 |
auf Bestellung 2737 Stücke: Lieferzeit 10-14 Tag (e) |
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BSP324H6327XTSA1 | Infineon Technologies |
Description: MOSFET N-CH 400V 170MA SOT223-4Qualification: AEC-Q101 Grade: Automotive Drain to Source Voltage (Vdss): 400 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PG-SOT223-4 Vgs(th) (Max) @ Id: 2.3V @ 94µA Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 25Ohm @ 170mA, 10V Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 154 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V |
auf Bestellung 1538 Stücke: Lieferzeit 10-14 Tag (e) |
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BSP324H6327XTSA1 | INFINEON |
Description: INFINEON - BSP324H6327XTSA1 - Leistungs-MOSFET, n-Kanal, 400 V, 170 mA, 25 ohm, SOT-223, OberflächenmontagetariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 400V rohsCompliant: YES Dauer-Drainstrom Id: 170mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.9V euEccn: NLR Verlustleistung: 1.8W Bauform - Transistor: SOT-223 Anzahl der Pins: 4Pin(s) Produktpalette: SIPMOS productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 25ohm SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 1310 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| BSP324H6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 0.17A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 0.17A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 25Ω
Mounting: SMD
Kind of channel: enhancement
Technology: SIPMOS™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 0.17A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 0.17A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 25Ω
Mounting: SMD
Kind of channel: enhancement
Technology: SIPMOS™
auf Bestellung 278 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 61+ | 1.17 EUR |
| 95+ | 0.76 EUR |
| 145+ | 0.49 EUR |
| 200+ | 0.44 EUR |
| BSP324H6327XTSA1 |
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Hersteller: Infineon Technologies
MOSFETs N-Ch 400V 170mA SOT-223-3
MOSFETs N-Ch 400V 170mA SOT-223-3
auf Bestellung 2737 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.35 EUR |
| 10+ | 0.95 EUR |
| 100+ | 0.65 EUR |
| 500+ | 0.52 EUR |
| 1000+ | 0.38 EUR |
| 5000+ | 0.36 EUR |
| BSP324H6327XTSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 400V 170MA SOT223-4
Qualification: AEC-Q101
Grade: Automotive
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 2.3V @ 94µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 25Ohm @ 170mA, 10V
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 154 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Description: MOSFET N-CH 400V 170MA SOT223-4
Qualification: AEC-Q101
Grade: Automotive
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 2.3V @ 94µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 25Ohm @ 170mA, 10V
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 154 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
auf Bestellung 1538 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 11+ | 1.65 EUR |
| 17+ | 1.04 EUR |
| 100+ | 0.68 EUR |
| 500+ | 0.53 EUR |
| BSP324H6327XTSA1 |
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Hersteller: INFINEON
Description: INFINEON - BSP324H6327XTSA1 - Leistungs-MOSFET, n-Kanal, 400 V, 170 mA, 25 ohm, SOT-223, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 400V
rohsCompliant: YES
Dauer-Drainstrom Id: 170mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.9V
euEccn: NLR
Verlustleistung: 1.8W
Bauform - Transistor: SOT-223
Anzahl der Pins: 4Pin(s)
Produktpalette: SIPMOS
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 25ohm
SVHC: No SVHC (25-Jun-2025)
Description: INFINEON - BSP324H6327XTSA1 - Leistungs-MOSFET, n-Kanal, 400 V, 170 mA, 25 ohm, SOT-223, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 400V
rohsCompliant: YES
Dauer-Drainstrom Id: 170mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.9V
euEccn: NLR
Verlustleistung: 1.8W
Bauform - Transistor: SOT-223
Anzahl der Pins: 4Pin(s)
Produktpalette: SIPMOS
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 25ohm
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 1310 Stücke:
Lieferzeit 14-21 Tag (e)




