BSP603S2LHUMA1 Infineon Technologies
Hersteller: Infineon TechnologiesTrans MOSFET N-CH 55V 5.2A Automotive AEC-Q101 4-Pin(3+Tab) SOT-223 T/R
auf Bestellung 3970 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 319+ | 1.7 EUR |
| 500+ | 1.48 EUR |
| 1000+ | 1.31 EUR |
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Technische Details BSP603S2LHUMA1 Infineon Technologies
Description: MOSFET N-CH 55V 5.2A SOT223-4, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), Rds On (Max) @ Id, Vgs: 33mOhm @ 2.6A, 10V, Power Dissipation (Max): 1.8W (Ta), Vgs(th) (Max) @ Id: 2V @ 50µA, Supplier Device Package: PG-SOT223-4, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BSP603S2LHUMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| BSP603S2LHUMA1 | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - BSP603S2LHUMA1 - BSP603S2L 55V, N-CH, AUTOMOTIVE MOSFET, tariffCode: 85412900 euEccn: TBC hazardous: false productTraceability: No usEccn: TBC SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 1125 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP603S2LHUMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 55V 5.2A Automotive 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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BSP603S2LHUMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 55V 5.2A Automotive 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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BSP603S2LHUMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 55V 5.2A SOT223-4 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) Rds On (Max) @ Id, Vgs: 33mOhm @ 2.6A, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 2V @ 50µA Supplier Device Package: PG-SOT223-4 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |