| Anzahl | Preis |
|---|---|
| 3+ | 1.08 EUR |
| 10+ | 1.07 EUR |
| 1000+ | 0.91 EUR |
| 10000+ | 0.4 EUR |
| 25000+ | 0.37 EUR |
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Technische Details BSP716NH6327XTSA1 Infineon Technologies
Description: MOSFET N-CH 75V 2.3A SOT223-4, Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V, Drain to Source Voltage (Vdss): 75 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: PG-SOT223-4, Vgs(th) (Max) @ Id: 1.8V @ 218µA, Power Dissipation (Max): 1.8W (Ta), Rds On (Max) @ Id, Vgs: 160mOhm @ 2.3A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR).
Weitere Produktangebote BSP716NH6327XTSA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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BSP716NH6327XTSA1 | Infineon Technologies |
 Description: MOSFET N-CH 75V 2.3A SOT223-4Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V Drain to Source Voltage (Vdss): 75 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: PG-SOT223-4 Vgs(th) (Max) @ Id: 1.8V @ 218µA Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 160mOhm @ 2.3A, 10V Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
|
BSP716NH6327XTSA1 | Infineon Technologies |
Description: MOSFET N-CH 75V 2.3A SOT223-4 Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V Drain to Source Voltage (Vdss): 75 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: PG-SOT223-4 Vgs(th) (Max) @ Id: 1.8V @ 218µA Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 160mOhm @ 2.3A, 10V Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BSP716NH6327XTSA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 2.3A SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 1.8V @ 218µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 75V 2.3A SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 1.8V @ 218µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSP716NH6327XTSA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 2.3A SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 1.8V @ 218µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 75V 2.3A SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 1.8V @ 218µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH