
BSP92PE6327 Infineon Technologies
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Technische Details BSP92PE6327 Infineon Technologies
Description: MOSFET P-CH 250V 260MA SOT223-4, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 260mA (Ta), Rds On (Max) @ Id, Vgs: 12Ohm @ 260mA, 10V, Power Dissipation (Max): 1.8W (Ta), Vgs(th) (Max) @ Id: 2V @ 130µA, Supplier Device Package: PG-SOT223-4, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 104 pF @ 25 V, Qualification: AEC-Q101.
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BSP92P E6327 | Hersteller : Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 260mA (Ta) Rds On (Max) @ Id, Vgs: 12Ohm @ 260mA, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 2V @ 130µA Supplier Device Package: PG-SOT223-4 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 104 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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BSP92P E6327 | Hersteller : Infineon Technologies |
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Produkt ist nicht verfügbar |