Weitere Produktangebote BSR202NL6327HTSA1 nach Preis ab 0.23 EUR bis 1.25 EUR
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BSR202NL6327HTSA1 | INFINEON TECHNOLOGIES |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 3.8A; 0.5W; SC59 Case: SC59 Kind of channel: enhancement Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Mounting: SMD Polarisation: unipolar On-state resistance: 21mΩ Power dissipation: 0.5W Drain current: 3.8A Gate-source voltage: ±12V Drain-source voltage: 20V |
auf Bestellung 2466 Stücke: Lieferzeit 14-21 Tag (e) |
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BSR202NL6327HTSA1 | Infineon Technologies |
Description: MOSFET N-CH 20V 3.8A SC59 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Rds On (Max) @ Id, Vgs: 21mOhm @ 3.8A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 30µA Supplier Device Package: PG-SC59-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1147 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 2142 Stücke: Lieferzeit 10-14 Tag (e) |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.8A; 0.5W; SC59
Case: SC59
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Mounting: SMD
Polarisation: unipolar
On-state resistance: 21mΩ
Power dissipation: 0.5W
Drain current: 3.8A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.8A; 0.5W; SC59
Case: SC59
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Mounting: SMD
Polarisation: unipolar
On-state resistance: 21mΩ
Power dissipation: 0.5W
Drain current: 3.8A
Gate-source voltage: ±12V
Drain-source voltage: 20V
auf Bestellung 2466 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 99+ | 0.73 EUR |
| 160+ | 0.45 EUR |
| 211+ | 0.34 EUR |
| 234+ | 0.31 EUR |
| 265+ | 0.27 EUR |
| 500+ | 0.25 EUR |
| 1000+ | 0.23 EUR |
| BSR202NL6327HTSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 3.8A SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 3.8A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 30µA
Supplier Device Package: PG-SC59-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1147 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET N-CH 20V 3.8A SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 3.8A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 30µA
Supplier Device Package: PG-SC59-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1147 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 2142 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 15+ | 1.25 EUR |
| 23+ | 0.77 EUR |
| 100+ | 0.49 EUR |
| 500+ | 0.38 EUR |
| 1000+ | 0.34 EUR |