 
BSR302NL6327HTSA1 Infineon Technologies
 Hersteller: Infineon Technologies
                                                Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 30V 3.7A SC59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 3.7A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: PG-SC59-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis | 
|---|---|
| 2435+ | 0.18 EUR | 
Produktrezensionen
Produktbewertung abgeben
Technische Details BSR302NL6327HTSA1 Infineon Technologies
Description: MOSFET N-CH 30V 3.7A SC59, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), Rds On (Max) @ Id, Vgs: 23mOhm @ 3.7A, 10V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 2V @ 30µA, Supplier Device Package: PG-SC59-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V, Grade: Automotive, Qualification: AEC-Q101. 
Weitere Produktangebote BSR302NL6327HTSA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | 
|---|---|---|---|---|---|
|   | BSR302NL6327HTSA1 | Hersteller : Infineon Technologies |  MOSFET N-Ch 30V 3.7A SOT-23-3 | auf Bestellung 2952 Stücke:Lieferzeit 10-14 Tag (e) | |
|   | BSR302NL6327HTSA1 | Hersteller : ROCHESTER ELECTRONICS |  Description: ROCHESTER ELECTRONICS - BSR302NL6327HTSA1 - BSR302 250V-600V SMALL SIGNALOR SMALL tariffCode: 85412100 productTraceability: No rohsCompliant: YES euEccn: TBC hazardous: false rohsPhthalatesCompliant: TBA usEccn: TBC SVHC: No SVHC (27-Jun-2024) | auf Bestellung 20547 Stücke:Lieferzeit 14-21 Tag (e) | |
|   | BSR302NL6327HTSA1 | Hersteller : Infineon Technologies |  Description: MOSFET N-CH 30V 3.7A SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 3.7A, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2V @ 30µA Supplier Device Package: PG-SC59-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |
|   | BSR302NL6327HTSA1 | Hersteller : INFINEON TECHNOLOGIES |  Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.7A; 0.5W; SC59 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Technology: OptiMOS™ 2 Polarisation: unipolar On-state resistance: 36mΩ Power dissipation: 0.5W Drain current: 3.7A Gate-source voltage: ±20V Drain-source voltage: 30V Case: SC59 | Produkt ist nicht verfügbar |