BSR302NL6327HTSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 3.7A SC59
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-SC59-3
Vgs(th) (Max) @ Id: 2V @ 30µA
Qualification: AEC-Q101
Grade: Automotive
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Produktrezensionen
Produktbewertung abgeben
Technische Details BSR302NL6327HTSA1 Infineon Technologies
Description: MOSFET N-CH 30V 3.7A SC59, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: PG-SC59-3, Vgs(th) (Max) @ Id: 2V @ 30µA, Power Dissipation (Max): 500mW (Ta), Rds On (Max) @ Id, Vgs: 23mOhm @ 3.7A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote BSR302NL6327HTSA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
|
BSR302NL6327HTSA1 | Infineon Technologies |
MOSFET N-Ch 30V 3.7A SOT-23-3 |
auf Bestellung 2952 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| BSR302NL6327HTSA1 |
![]() |
Hersteller: Infineon Technologies
MOSFET N-Ch 30V 3.7A SOT-23-3
MOSFET N-Ch 30V 3.7A SOT-23-3
auf Bestellung 2952 Stücke:
Lieferzeit 10-14 Tag (e)


