BSR302NL6327HTSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 30V 3.7A SC59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 3.7A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: PG-SC59-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.16 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BSR302NL6327HTSA1 Infineon Technologies
Description: MOSFET N-CH 30V 3.7A SC59, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), Rds On (Max) @ Id, Vgs: 23mOhm @ 3.7A, 10V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 2V @ 30µA, Supplier Device Package: PG-SC59-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V.
Weitere Produktangebote BSR302NL6327HTSA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
BSR302NL6327HTSA1 | Hersteller : Infineon Technologies |
MOSFET N-Ch 30V 3.7A SOT-23-3 |
auf Bestellung 2952 Stücke: Lieferzeit 10-14 Tag (e) |
|
 |
BSR302NL6327HTSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.7A; 0.5W; SC59 Mounting: SMD Case: SC59 Power dissipation: 0.5W Technology: OptiMOS™ 2 Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 3.7A On-state resistance: 36mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
|
|
BSR302NL6327HTSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 3.7A SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 3.7A, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2V @ 30µA Supplier Device Package: PG-SC59-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V |
Produkt ist nicht verfügbar |
|
|
|
BSR302NL6327HTSA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 3.7A SC59 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 3.7A, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2V @ 30µA Supplier Device Package: PG-SC59-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V |
Produkt ist nicht verfügbar |
|
|
|
BSR302NL6327HTSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.7A; 0.5W; SC59 Mounting: SMD Case: SC59 Power dissipation: 0.5W Technology: OptiMOS™ 2 Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 3.7A On-state resistance: 36mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |