BSS119 L6433 Infineon Technologies
auf Bestellung 86725 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2844+ | 0.15 EUR |
| 10000+ | 0.13 EUR |
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Technische Details BSS119 L6433 Infineon Technologies
Description: SMALL SIGNAL N-CHANNEL MOSFET, Packaging: Bulk, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 170mA (Ta), Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V, Power Dissipation (Max): 360mW (Ta), Vgs(th) (Max) @ Id: 2.3V @ 50µA, Supplier Device Package: PG-SOT23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 78 pF @ 25 V.
Weitere Produktangebote BSS119 L6433 nach Preis ab 0.16 EUR bis 0.16 EUR
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BSS119L6433 | Hersteller : Infineon Technologies |
 Description: SMALL SIGNAL N-CHANNEL MOSFETPackaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 2.3V @ 50µA Supplier Device Package: PG-SOT23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 78 pF @ 25 V |
auf Bestellung 86725 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS119 L6433 | Hersteller : Infineon Technologies |
GaN FETs N-Ch 100V 170mA SOT-23-3 |
Produkt ist nicht verfügbar |