BSS123_R1_00001 Panjit International Inc.
Hersteller: Panjit International Inc.Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.05 EUR |
| 6000+ | 0.05 EUR |
| 9000+ | 0.04 EUR |
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Technische Details BSS123_R1_00001 Panjit International Inc.
Description: SOT-23, MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 170mA (Ta), Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V.
Weitere Produktangebote BSS123_R1_00001 nach Preis ab 0.04 EUR bis 0.33 EUR
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BSS123_R1_00001 | Hersteller : PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 170mA; Idm: 0.68A; 500mW Case: SOT23 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 100V Drain current: 0.17A On-state resistance: 10Ω Type of transistor: N-MOSFET Power dissipation: 0.5W Polarisation: unipolar Gate charge: 1.8nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 0.68A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3342 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123_R1_00001 | Hersteller : PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 170mA; Idm: 0.68A; 500mW Case: SOT23 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 100V Drain current: 0.17A On-state resistance: 10Ω Type of transistor: N-MOSFET Power dissipation: 0.5W Polarisation: unipolar Gate charge: 1.8nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 0.68A |
auf Bestellung 3342 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123_R1_00001 | Hersteller : Panjit International Inc. |
Description: SOT-23, MOSFET Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V |
auf Bestellung 15693 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123_R1_00001 | Hersteller : Panjit |
MOSFETs 100V N-Channel Enhancement Mode MOSFET-ESD Protected |
auf Bestellung 9769 Stücke: Lieferzeit 10-14 Tag (e) |
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| BSS123_R1_00001 | Hersteller : PanJit |
BSS123_R1_00001 |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123-R1-00001 | Hersteller : Panjit |
MOSFETs SOT23 100V .17A N-CH |
Produkt ist nicht verfügbar |