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Technische Details BSS123_R1_00001 PanJit
Description: SOT-23, MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 170mA (Ta), Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V.
Weitere Produktangebote BSS123_R1_00001 nach Preis ab 0.052 EUR bis 0.36 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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BSS123_R1_00001 | PanJit |
Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R |
auf Bestellung 2950 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 170mA; Idm: 0.68A; 500mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.17A Pulsed drain current: 0.68A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Gate charge: 1.8nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2497 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123_R1_00001 | Panjit |
MOSFETs 100V N-Channel Enhancement Mode MOSFET-ESD Protected |
auf Bestellung 2448 Stücke: Lieferzeit 10-14 Tag (e) |
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| BSS123_R1_00001 |
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Hersteller: PanJit
Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R
Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R
auf Bestellung 2950 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 933+ | 0.18 EUR |
| 1500+ | 0.11 EUR |
| 2058+ | 0.077 EUR |
| BSS123_R1_00001 |
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Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 170mA; Idm: 0.68A; 500mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.17A
Pulsed drain current: 0.68A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 170mA; Idm: 0.68A; 500mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.17A
Pulsed drain current: 0.68A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2497 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 385+ | 0.23 EUR |
| 463+ | 0.18 EUR |
| 841+ | 0.1 EUR |
| 1359+ | 0.063 EUR |
| 1634+ | 0.052 EUR |
| BSS123_R1_00001 |
![]() |
Hersteller: Panjit
MOSFETs 100V N-Channel Enhancement Mode MOSFET-ESD Protected
MOSFETs 100V N-Channel Enhancement Mode MOSFET-ESD Protected
auf Bestellung 2448 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 0.36 EUR |
| 15+ | 0.23 EUR |
| 100+ | 0.14 EUR |
| 500+ | 0.1 EUR |
| 1000+ | 0.09 EUR |
| 3000+ | 0.071 EUR |
| 6000+ | 0.065 EUR |




