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BSS123_R1_00001

BSS123_R1_00001 Panjit International Inc.

BSS123.pdf
Hersteller: Panjit International Inc.
Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.059 EUR
6000+0.053 EUR
9000+0.049 EUR
Mindestbestellmenge: 3000 Stücke
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Technische Details BSS123_R1_00001 Panjit International Inc.

Description: SOT-23, MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 170mA (Ta), Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V.

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BSS123_R1_00001 BSS123_R1_00001 PanJit bss123190725rev.01.pdf Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R
auf Bestellung 3097 Stücke:
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1973+0.073 EUR
3000+0.061 EUR
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BSS123_R1_00001 BSS123_R1_00001 PanJit Semiconductor BSS123.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 170mA; Idm: 0.68A; 500mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.17A
Pulsed drain current: 0.68A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3097 Stücke:
Lieferzeit 14-21 Tag (e)
385+0.19 EUR
463+0.15 EUR
841+0.085 EUR
1359+0.053 EUR
1634+0.044 EUR
3000+0.038 EUR
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BSS123_R1_00001 BSS123_R1_00001 Panjit 3CB327D75B3A82961AD221F5E0FB3B204D1D7D2014301FAE7C5734A28867A66C.pdf MOSFETs 100V N-Channel Enhancement Mode MOSFET-ESD Protected
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
10+0.3 EUR
16+0.18 EUR
100+0.11 EUR
500+0.083 EUR
1000+0.072 EUR
3000+0.055 EUR
6000+0.049 EUR
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BSS123_R1_00001 BSS123_R1_00001 Panjit International Inc. BSS123.pdf Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
auf Bestellung 13768 Stücke:
Lieferzeit 10-14 Tag (e)
59+0.3 EUR
98+0.18 EUR
157+0.11 EUR
500+0.082 EUR
1000+0.072 EUR
Mindestbestellmenge: 59 Stücke
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BSS123_R1_00001 bss123190725rev.01.pdf
BSS123_R1_00001
Hersteller: PanJit
Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R
auf Bestellung 3097 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
1973+0.073 EUR
3000+0.061 EUR
Mindestbestellmenge: 1973 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSS123_R1_00001 BSS123.pdf
BSS123_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 170mA; Idm: 0.68A; 500mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.17A
Pulsed drain current: 0.68A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3097 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
385+0.19 EUR
463+0.15 EUR
841+0.085 EUR
1359+0.053 EUR
1634+0.044 EUR
3000+0.038 EUR
Mindestbestellmenge: 385 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSS123_R1_00001 3CB327D75B3A82961AD221F5E0FB3B204D1D7D2014301FAE7C5734A28867A66C.pdf
BSS123_R1_00001
Hersteller: Panjit
MOSFETs 100V N-Channel Enhancement Mode MOSFET-ESD Protected
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
10+0.3 EUR
16+0.18 EUR
100+0.11 EUR
500+0.083 EUR
1000+0.072 EUR
3000+0.055 EUR
6000+0.049 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSS123_R1_00001 BSS123.pdf
BSS123_R1_00001
Hersteller: Panjit International Inc.
Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
auf Bestellung 13768 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
59+0.3 EUR
98+0.18 EUR
157+0.11 EUR
500+0.082 EUR
1000+0.072 EUR
Mindestbestellmenge: 59 Stücke
Im Einkaufswagen  Stück im Wert von  UAH