BSS123IXTSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: SMALL SIGNAL MOSFETS PG-SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 13µA
Supplier Device Package: PG-SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 0.63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 50 V
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.094 EUR |
| 9000+ | 0.079 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
3000 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details BSS123IXTSA1 Infineon Technologies
Description: SMALL SIGNAL MOSFETS PG-SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 190mA (Ta), Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1.8V @ 13µA, Supplier Device Package: PG-SOT-23-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 0.63 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 50 V.
Weitere Produktangebote BSS123IXTSA1 nach Preis ab 0.071 EUR bis 0.46 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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BSS123IXTSA1 | Infineon |
Transistor N-Channel MOSFET; 100V; 20V; 10Ohm; 190mA; 500mW; -55°C ~ 150°C; BSS123IXTSA1; BSS123I TBSS123i Anzahl je Verpackung: 100 Stücke |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123IXTSA1 | Infineon Technologies |
MOSFETs SMALL SIGNAL MOSFETS |
auf Bestellung 28521 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123IXTSA1 | Infineon Technologies |
Description: SMALL SIGNAL MOSFETS PG-SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 190mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 13µA Supplier Device Package: PG-SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 0.63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 50 V |
auf Bestellung 21973 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123IXTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23 Mounting: SMD Pulsed drain current: 0.77A Power dissipation: 0.5W Gate charge: 0.63nC Polarisation: unipolar Technology: OptiMOS™ Drain current: 0.15A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: SOT23 On-state resistance: 10Ω |
auf Bestellung 679 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| BSS123IXTSA1 |
|
Hersteller: Infineon
Transistor N-Channel MOSFET; 100V; 20V; 10Ohm; 190mA; 500mW; -55°C ~ 150°C; BSS123IXTSA1; BSS123I TBSS123i
Anzahl je Verpackung: 100 Stücke
Transistor N-Channel MOSFET; 100V; 20V; 10Ohm; 190mA; 500mW; -55°C ~ 150°C; BSS123IXTSA1; BSS123I TBSS123i
Anzahl je Verpackung: 100 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 300+ | 0.13 EUR |
| BSS123IXTSA1 |
|
Hersteller: Infineon Technologies
MOSFETs SMALL SIGNAL MOSFETS
MOSFETs SMALL SIGNAL MOSFETS
auf Bestellung 28521 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 0.46 EUR |
| 17+ | 0.2 EUR |
| 100+ | 0.18 EUR |
| 500+ | 0.13 EUR |
| 3000+ | 0.094 EUR |
| 9000+ | 0.08 EUR |
| 24000+ | 0.071 EUR |
| BSS123IXTSA1 |
|
Hersteller: Infineon Technologies
Description: SMALL SIGNAL MOSFETS PG-SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 13µA
Supplier Device Package: PG-SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 0.63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 50 V
Description: SMALL SIGNAL MOSFETS PG-SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 13µA
Supplier Device Package: PG-SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 0.63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 50 V
auf Bestellung 21973 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 46+ | 0.46 EUR |
| 75+ | 0.29 EUR |
| 105+ | 0.2 EUR |
| 120+ | 0.18 EUR |
| 500+ | 0.13 EUR |
| BSS123IXTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Mounting: SMD
Pulsed drain current: 0.77A
Power dissipation: 0.5W
Gate charge: 0.63nC
Polarisation: unipolar
Technology: OptiMOS™
Drain current: 0.15A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SOT23
On-state resistance: 10Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23
Mounting: SMD
Pulsed drain current: 0.77A
Power dissipation: 0.5W
Gate charge: 0.63nC
Polarisation: unipolar
Technology: OptiMOS™
Drain current: 0.15A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SOT23
On-state resistance: 10Ω
auf Bestellung 679 Stücke:
Lieferzeit 14-21 Tag (e)