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BSS123W RFG

BSS123W RFG Taiwan Semiconductor Corporation

BSS123W_A2007.pdf Hersteller: Taiwan Semiconductor Corporation
Description: 100V, 0.16A, SINGLE N-CHANNEL PO
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 160mA, 10V
Power Dissipation (Max): 298mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 50 V
auf Bestellung 1471 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+0.35 EUR
80+0.22 EUR
128+0.14 EUR
500+0.10 EUR
1000+0.09 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details BSS123W RFG Taiwan Semiconductor Corporation

Description: 100V, 0.16A, SINGLE N-CHANNEL PO, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 160mA (Ta), Rds On (Max) @ Id, Vgs: 5Ohm @ 160mA, 10V, Power Dissipation (Max): 298mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-323, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 50 V.

Weitere Produktangebote BSS123W RFG nach Preis ab 0.06 EUR bis 0.37 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
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BSS123W RFG BSS123W RFG Hersteller : Taiwan Semiconductor BSS123W_A2007.pdf MOSFETs 100V, 0.16A, Single N-Channel Power MOSFET
auf Bestellung 901 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+0.37 EUR
13+0.23 EUR
100+0.14 EUR
500+0.11 EUR
1000+0.08 EUR
3000+0.07 EUR
6000+0.06 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
BSS123W RFG BSS123W RFG Hersteller : Taiwan Semiconductor bss123w_a2007.pdf Trans MOSFET N-CH 100V 0.16A 3-Pin SOT-323 T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSS123W RFG BSS123W RFG Hersteller : Taiwan Semiconductor bss123w_a2007.pdf Trans MOSFET N-CH 100V 0.16A 3-Pin SOT-323 T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSS123W RFG BSS123W RFG Hersteller : Taiwan Semiconductor Corporation BSS123W_A2007.pdf Description: 100V, 0.16A, SINGLE N-CHANNEL PO
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 160mA, 10V
Power Dissipation (Max): 298mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH