BSS138AKM-QYL Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: BSS138AKM-Q/SOT883/XQFN3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 100mA, 10V
Power Dissipation (Max): 710mW (Ta), 3.1W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-883
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 315 pC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 63+ | 0.28 EUR |
| 99+ | 0.18 EUR |
| 160+ | 0.11 EUR |
| 500+ | 0.081 EUR |
| 1000+ | 0.071 EUR |
| 2000+ | 0.063 EUR |
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Technische Details BSS138AKM-QYL Nexperia USA Inc.
Description: BSS138AKM-Q/SOT883/XQFN3, Packaging: Tape & Reel (TR), Package / Case: SC-101, SOT-883, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 350mA (Ta), Rds On (Max) @ Id, Vgs: 3Ohm @ 100mA, 10V, Power Dissipation (Max): 710mW (Ta), 3.1W (Tc), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SOT-883, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 315 pC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9 pF @ 30 V, Qualification: AEC-Q101.
Weitere Produktangebote BSS138AKM-QYL nach Preis ab 0.067 EUR bis 0.36 EUR
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BSS138AKM-QYL | Hersteller : Nexperia |
MOSFETs BSS138AKM-Q/SOT883/XQFN3 |
auf Bestellung 3649 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138AKM-QYL | Hersteller : Nexperia USA Inc. |
Description: BSS138AKM-Q/SOT883/XQFN3Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 100mA, 10V Power Dissipation (Max): 710mW (Ta), 3.1W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-883 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 315 pC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9 pF @ 30 V Qualification: AEC-Q101 |
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