BSS138AKQB-QZ Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: BSS138AKQB-Q/SOT8015/DFN1110D-
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 9 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 315 pC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Grade: Automotive
Supplier Device Package: DFN1110D-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 490mW (Ta), 6.9W (Tc)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Cut Tape (CT)
| Anzahl | Preis |
|---|---|
| 24+ | 0.74 EUR |
| 39+ | 0.46 EUR |
| 54+ | 0.33 EUR |
| 100+ | 0.29 EUR |
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Technische Details BSS138AKQB-QZ Nexperia USA Inc.
Description: BSS138AKQB-Q/SOT8015/DFN1110D-, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 9 pF @ 30 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Grade: Automotive, Supplier Device Package: DFN1110D-3, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Power Dissipation (Max): 490mW (Ta), 6.9W (Tc), Rds On (Max) @ Id, Vgs: 2.8Ohm @ 100mA, 10V, Current - Continuous Drain (Id) @ 25°C: 340mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Wettable Flank, Package / Case: 3-XDFN Exposed Pad, Packaging: Tape & Reel (TR), Gate Charge (Qg) (Max) @ Vgs: 315 pC @ 10 V.
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BSS138AKQB-QZ | Hersteller : Nexperia USA Inc. |
Description: BSS138AKQB-Q/SOT8015/DFN1110D- Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 9 pF @ 30 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Grade: Automotive Supplier Device Package: DFN1110D-3 Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 490mW (Ta), 6.9W (Tc) Rds On (Max) @ Id, Vgs: 2.8Ohm @ 100mA, 10V Current - Continuous Drain (Id) @ 25°C: 340mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 3-XDFN Exposed Pad Packaging: Tape & Reel (TR) Gate Charge (Qg) (Max) @ Vgs: 315 pC @ 10 V |
Produkt ist nicht verfügbar |
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BSS138AKQB-QZ | Hersteller : Nexperia |
MOSFETs BSS138AKQB-Q/SOT8015/DFN1110D- |
Produkt ist nicht verfügbar |