BSS139IXTMA1 Infineon Technologies

Description: MOSFET N-CH 250V 100MA SOT23-3, Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 5 V, Drain to Source Voltage (Vdss): 250 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 0V, 10V, Part Status: Discontinued at Digi-Key, Supplier Device Package: PG-SOT23-3-5, Vgs(th) (Max) @ Id: 1V @ 56µA, Power Dissipation (Max): 360mW (Ta), Rds On (Max) @ Id, Vgs: 14Ohm @ 100mA, 10V, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), FET Type: N-Channel, Depletion Mode, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).