BSS139L6906HTSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 100MA SOT23-3
Qualification: AEC-Q101
Grade: Automotive
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 76 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Part Status: Obsolete
Supplier Device Package: PG-SOT23
Vgs(th) (Max) @ Id: 1V @ 56µA
Power Dissipation (Max): 360mW (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 0.1mA, 10V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel, Depletion Mode
Produktrezensionen
Produktbewertung abgeben
Technische Details BSS139L6906HTSA1 Infineon Technologies
Description: MOSFET N-CH 250V 100MA SOT23-3, Qualification: AEC-Q101, Grade: Automotive, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 76 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V, Drain to Source Voltage (Vdss): 250 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 0V, 10V, Part Status: Obsolete, Supplier Device Package: PG-SOT23, Vgs(th) (Max) @ Id: 1V @ 56µA, Power Dissipation (Max): 360mW (Ta), Rds On (Max) @ Id, Vgs: 14Ohm @ 0.1mA, 10V, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), FET Type: N-Channel, Depletion Mode.