BSS159NL6906 Infineon Technologies

Description: SMALL SIGNAL N-CHANNEL MOSFET, Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 5 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 0V, 10V, Part Status: Active, Supplier Device Package: PG-SOT23-3-5, Vgs(th) (Max) @ Id: 2.4V @ 26µA, Power Dissipation (Max): 360mW (Ta), FET Feature: Depletion Mode, Rds On (Max) @ Id, Vgs: 3.5Ohm @ 160mA, 10V, Current - Continuous Drain (Id) @ 25°C: 230mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 25 V.