BSS209PWH6327XTSA1
Produktcode: 185997
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Transistoren > Transistoren P-Kanal-Feld
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Weitere Produktangebote BSS209PWH6327XTSA1 nach Preis ab 0.088 EUR bis 0.56 EUR
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BSS209PWH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.63A; 0.3W; PG-SOT-323 Mounting: SMD Drain-source voltage: -20V Drain current: -0.63A Power dissipation: 0.3W On-state resistance: 0.55Ω Gate-source voltage: ±12V Polarisation: unipolar Case: PG-SOT-323 Kind of channel: enhancement Type of transistor: P-MOSFET Technology: OptiMOS™ P |
auf Bestellung 354 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS209PWH6327XTSA1 | Infineon Technologies |
MOSFETs P-Ch -20V -630mA SOT-323-3 |
auf Bestellung 1116 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS209PWH6327XTSA1 | Infineon Technologies |
Description: MOSFET P-CH 20V 630MA SOT323-3 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 630mA (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 630mA, 4.5V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 3.5µA Supplier Device Package: PG-SOT323 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 15 V Qualification: AEC-Q101 |
auf Bestellung 2414 Stücke: Lieferzeit 10-14 Tag (e) |
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| BSS209PWH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.63A; 0.3W; PG-SOT-323
Mounting: SMD
Drain-source voltage: -20V
Drain current: -0.63A
Power dissipation: 0.3W
On-state resistance: 0.55Ω
Gate-source voltage: ±12V
Polarisation: unipolar
Case: PG-SOT-323
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.63A; 0.3W; PG-SOT-323
Mounting: SMD
Drain-source voltage: -20V
Drain current: -0.63A
Power dissipation: 0.3W
On-state resistance: 0.55Ω
Gate-source voltage: ±12V
Polarisation: unipolar
Case: PG-SOT-323
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
auf Bestellung 354 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 239+ | 0.3 EUR |
| 329+ | 0.22 EUR |
| 354+ | 0.2 EUR |
| BSS209PWH6327XTSA1 |
|
Hersteller: Infineon Technologies
MOSFETs P-Ch -20V -630mA SOT-323-3
MOSFETs P-Ch -20V -630mA SOT-323-3
auf Bestellung 1116 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 0.48 EUR |
| 10+ | 0.29 EUR |
| 100+ | 0.18 EUR |
| 500+ | 0.14 EUR |
| 1000+ | 0.12 EUR |
| 3000+ | 0.099 EUR |
| 6000+ | 0.088 EUR |
| BSS209PWH6327XTSA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET P-CH 20V 630MA SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 630mA (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 630mA, 4.5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 3.5µA
Supplier Device Package: PG-SOT323
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET P-CH 20V 630MA SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 630mA (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 630mA, 4.5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 3.5µA
Supplier Device Package: PG-SOT323
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 2414 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 32+ | 0.56 EUR |
| 52+ | 0.34 EUR |
| 100+ | 0.21 EUR |
| 500+ | 0.16 EUR |
| 1000+ | 0.14 EUR |