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BSS214NW L6327 Infineon Technologies


BSS214NW_Rev2.1.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30431b3e89eb011b695aebc01bde
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 1.5A SOT323-3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 143 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: PG-SOT323
Vgs(th) (Max) @ Id: 1.2V @ 3.7µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
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Technische Details BSS214NW L6327 Infineon Technologies

Description: MOSFET N-CH 20V 1.5A SOT323-3, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 143 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Part Status: Obsolete, Supplier Device Package: PG-SOT323, Vgs(th) (Max) @ Id: 1.2V @ 3.7µA, Power Dissipation (Max): 500mW (Ta), Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Tape & Reel (TR).