BSS215PH6327 Infineon Technologies
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 537+ | 0.28 EUR |
| 557+ | 0.26 EUR |
| 1000+ | 0.24 EUR |
| 2500+ | 0.22 EUR |
| 5000+ | 0.21 EUR |
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Technische Details BSS215PH6327 Infineon Technologies
Description: SMALL SIGNAL P-CHANNEL MOSFET, Packaging: Bulk, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 600mV @ 11µA, Supplier Device Package: PG-SOT23-3-5, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 346 pF @ 15 V.
Weitere Produktangebote BSS215PH6327 nach Preis ab 0.13 EUR bis 0.72 EUR
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BSS215P H6327 | Hersteller : Infineon Technologies |
 MOSFETs P-Ch -20V -1.5A SOT-23-3 |
auf Bestellung 25954 Stücke: Lieferzeit 10-14 Tag (e) |
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| BSS215P H6327 | Hersteller : Infineon |
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auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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| BSS215P H6327 | Hersteller : Infineon Technologies |
Description: SMALL SIGNAL P-CHANNEL MOSFET Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 600mV @ 11µA Supplier Device Package: PG-SOT23-3-5 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 346 pF @ 15 V |
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