BSS223PW L6327 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET P-CH 20V 390MA SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 390mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 390mA, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1.5µA
Supplier Device Package: PG-SOT323
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.62 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
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Technische Details BSS223PW L6327 Infineon Technologies
Description: MOSFET P-CH 20V 390MA SOT323-3, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 390mA (Ta), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 390mA, 4.5V, Power Dissipation (Max): 250mW (Ta), Vgs(th) (Max) @ Id: 1.2V @ 1.5µA, Supplier Device Package: PG-SOT323, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.62 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 15 V, Grade: Automotive, Qualification: AEC-Q101.
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BSS223PWL6327 | Hersteller : Infineon Technologies |
Description: SMALL SIGNAL P-CHANNEL MOSFET Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 390mA (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 390mA, 4.5V Power Dissipation (Max): 250mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 1.5µA Supplier Device Package: PG-SOT323-3-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.62 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 15 V |
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BSS223PW L6327 | Hersteller : Infineon Technologies |
MOSFET P-Ch -20V 390mA SOT-323-3 |
Produkt ist nicht verfügbar |