BSS225 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 90MA SOT89
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 131 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-SOT89
Vgs(th) (Max) @ Id: 2.3V @ 94µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 90mA, 10V
Current - Continuous Drain (Id) @ 25°C: 90mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
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Technische Details BSS225 Infineon Technologies
Description: MOSFET N-CH 600V 90MA SOT89, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 131 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PG-SOT89, Vgs(th) (Max) @ Id: 2.3V @ 94µA, Power Dissipation (Max): 1W (Ta), Rds On (Max) @ Id, Vgs: 45Ohm @ 90mA, 10V, Current - Continuous Drain (Id) @ 25°C: 90mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-243AA, Packaging: Tape & Reel (TR).