BSS64E6327

BSS64E6327 Infineon Technologies


SIEMD095-881.pdf?t.download=true&u=5oefqw Hersteller: Infineon Technologies
Description: TRANS NPN 80V 0.8A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 400µA, 4mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 330 mW
auf Bestellung 114000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
10377+0.047 EUR
Mindestbestellmenge: 10377
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details BSS64E6327 Infineon Technologies

Description: TRANS NPN 80V 0.8A SOT23, Packaging: Bulk, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 700mV @ 400µA, 4mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4mA, 1V, Frequency - Transition: 100MHz, Supplier Device Package: SOT-23, Part Status: Active, Current - Collector (Ic) (Max): 800 mA, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 330 mW.

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BSS64E6327 Hersteller : ROCHESTER ELECTRONICS SIEMD095-881.pdf?t.download=true&u=5oefqw Description: ROCHESTER ELECTRONICS - BSS64E6327 - BSS64 - SMALL SIGNAL N-CHANNEL MOSFET
tariffCode: 85412900
euEccn: TBC
hazardous: false
productTraceability: No
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 114000 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH