BSS670T116

BSS670T116 Rohm Semiconductor


bss670t116-e.pdf Hersteller: Rohm Semiconductor
Trans MOSFET N-CH 60V 0.65A 3-Pin SOT-23 T/R
auf Bestellung 5780 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1142+0.14 EUR
1146+ 0.13 EUR
1409+ 0.1 EUR
2000+ 0.092 EUR
3000+ 0.087 EUR
Mindestbestellmenge: 1142
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Technische Details BSS670T116 Rohm Semiconductor

Description: NCH 60V 650MA, SOT-23, SMALL SIG, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 650mA (Ta), Rds On (Max) @ Id, Vgs: 680mOhm @ 650mA, 10V, Power Dissipation (Max): 200mW (Ta), Vgs(th) (Max) @ Id: 2V @ 10µA, Supplier Device Package: SST3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V.

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BSS670T116 BSS670T116 Hersteller : Rohm Semiconductor bss670t116-e.pdf Trans MOSFET N-CH 60V 0.65A 3-Pin SOT-23 T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
989+0.16 EUR
1022+ 0.15 EUR
2500+ 0.14 EUR
Mindestbestellmenge: 989
BSS670T116 BSS670T116 Hersteller : ROHM Semiconductor datasheet?p=BSS670&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key MOSFET Silicon N-CH Mosfet, 60V Drain, +--20V Gate.
auf Bestellung 6480 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+0.77 EUR
10+ 0.59 EUR
100+ 0.37 EUR
1000+ 0.2 EUR
3000+ 0.18 EUR
9000+ 0.15 EUR
24000+ 0.14 EUR
Mindestbestellmenge: 4
BSS670T116 BSS670T116 Hersteller : Rohm Semiconductor datasheet?p=BSS670&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NCH 60V 650MA, SOT-23, SMALL SIG
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 650mA (Ta)
Rds On (Max) @ Id, Vgs: 680mOhm @ 650mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 10µA
Supplier Device Package: SST3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V
auf Bestellung 403 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
23+0.79 EUR
32+ 0.56 EUR
100+ 0.28 EUR
Mindestbestellmenge: 23
BSS670T116 BSS670T116 Hersteller : Rohm Semiconductor datasheet?p=BSS670&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NCH 60V 650MA, SOT-23, SMALL SIG
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 650mA (Ta)
Rds On (Max) @ Id, Vgs: 680mOhm @ 650mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 10µA
Supplier Device Package: SST3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V
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