BSS670T116 ROHM Semiconductor
| Anzahl | Preis |
|---|---|
| 5+ | 0.68 EUR |
| 10+ | 0.44 EUR |
| 100+ | 0.28 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.19 EUR |
| 3000+ | 0.17 EUR |
| 6000+ | 0.16 EUR |
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Technische Details BSS670T116 ROHM Semiconductor
Description: NCH 60V 650MA, SOT-23, SMALL SIG, Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Part Status: Active, Supplier Device Package: SST3, Vgs(th) (Max) @ Id: 2V @ 10µA, Power Dissipation (Max): 200mW (Ta), Rds On (Max) @ Id, Vgs: 680mOhm @ 650mA, 10V, Current - Continuous Drain (Id) @ 25°C: 650mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote BSS670T116 nach Preis ab 0.32 EUR bis 0.83 EUR
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BSS670T116 | Hersteller : Rohm Semiconductor |
 Description: NCH 60V 650MA, SOT-23, SMALL SIGInput Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Part Status: Active Supplier Device Package: SST3 Vgs(th) (Max) @ Id: 2V @ 10µA Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 680mOhm @ 650mA, 10V Current - Continuous Drain (Id) @ 25°C: 650mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
auf Bestellung 287 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS670T116 | Hersteller : Rohm Semiconductor |
Description: NCH 60V 650MA, SOT-23, SMALL SIG Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Part Status: Active Supplier Device Package: SST3 Vgs(th) (Max) @ Id: 2V @ 10µA Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 680mOhm @ 650mA, 10V Current - Continuous Drain (Id) @ 25°C: 650mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |