BSS83IXUSA1 Infineon Technologies
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 899+ | 0.16 EUR |
| 909+ | 0.15 EUR |
| 1231+ | 0.11 EUR |
| 1399+ | 0.092 EUR |
| 3000+ | 0.044 EUR |
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Technische Details BSS83IXUSA1 Infineon Technologies
Description: BSS83IXUSA1, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 320mA (Ta), 550mA (Tc), Rds On (Max) @ Id, Vgs: 1.7Ohm @ 300mA, 10V, Power Dissipation (Max): 400mW (Ta), 1.04W (Tc), Vgs(th) (Max) @ Id: 2V @ 34µA, Supplier Device Package: PG-SOT23-3-U03, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 1.09 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 72 pF @ 30 V.
Weitere Produktangebote BSS83IXUSA1 nach Preis ab 0.041 EUR bis 0.51 EUR
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BSS83IXUSA1 | Hersteller : Infineon Technologies |
 Trans MOSFET P-CH 60V 0.32A 3-Pin SOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS83IXUSA1 | Hersteller : Infineon Technologies |
Description: BSS83IXUSA1 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 320mA (Ta), 550mA (Tc) Rds On (Max) @ Id, Vgs: 1.7Ohm @ 300mA, 10V Power Dissipation (Max): 400mW (Ta), 1.04W (Tc) Vgs(th) (Max) @ Id: 2V @ 34µA Supplier Device Package: PG-SOT23-3-U03 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.09 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 72 pF @ 30 V |
auf Bestellung 2964 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS83IXUSA1 | Hersteller : Infineon Technologies |
MOSFETs Small Signal MOSFET, -60 V |
auf Bestellung 10118 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS83IXUSA1 | Hersteller : Infineon Technologies |
Trans MOSFET P-CH 60V 0.32A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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BSS83IXUSA1 | Hersteller : Infineon Technologies |
Description: BSS83IXUSA1 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 320mA (Ta), 550mA (Tc) Rds On (Max) @ Id, Vgs: 1.7Ohm @ 300mA, 10V Power Dissipation (Max): 400mW (Ta), 1.04W (Tc) Vgs(th) (Max) @ Id: 2V @ 34µA Supplier Device Package: PG-SOT23-3-U03 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.09 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 72 pF @ 30 V |
Produkt ist nicht verfügbar |