BSS83IXUSA1 Infineon Technologies

Description: BSS83IXUSA1, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 320mA (Ta), 550mA (Tc), Rds On (Max) @ Id, Vgs: 1.7Ohm @ 300mA, 10V, Power Dissipation (Max): 400mW (Ta), 1.04W (Tc), Vgs(th) (Max) @ Id: 2V @ 34µA, Supplier Device Package: PG-SOT23-3-U03, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 1.09 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 72 pF @ 30 V.