Technische Details BSS83PH6327XTSA1 Infineon Technologies
Description: INFINEON - BSS83PH6327XTSA1 - Leistungs-MOSFET, p-Kanal, 60 V, 330 mA, 2 ohm, SOT-23, Oberflächenmontage, tariffCode: 85412100, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 60V, rohsCompliant: YES, Dauer-Drainstrom Id: 330mA, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, isCanonical: Y, MSL: -, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 1.5V, euEccn: NLR, Verlustleistung: 360mW, Bauform - Transistor: SOT-23, Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Kanaltyp: p-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 2ohm, SVHC: No SVHC (25-Jun-2025).
Weitere Produktangebote BSS83PH6327XTSA1 nach Preis ab 0.064 EUR bis 0.95 EUR
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BSS83PH6327XTSA1 | Infineon Technologies |
Trans MOSFET P-CH 60V 0.33A 3-Pin SOT-23 T/R Automotive AEC-Q101 |
auf Bestellung 1368000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS83PH6327XTSA1 | Infineon Technologies |
Trans MOSFET P-CH 60V 0.33A 3-Pin SOT-23 T/R Automotive AEC-Q101 |
auf Bestellung 96000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS83PH6327XTSA1 | Infineon Technologies |
Description: MOSFET P-CH 60V 330MA SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 330mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 330mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 2V @ 80µA Supplier Device Package: PG-SOT23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 3.57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 78 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 75000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS83PH6327XTSA1 | Infineon |
Transistor P-Channel MOSFET; 60V; 20V; 3Ohm; 330mA; 360mW; -55°C ~ 150°C; Equivalent: BSS83PH6327; BSS83PH6327XTSA1; BSS83P; BSS83PH6327XTSA1 TBSS83pAnzahl je Verpackung: 100 Stücke |
auf Bestellung 190 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS83PH6327XTSA1 | Infineon Technologies |
Trans MOSFET P-CH 60V 0.33A 3-Pin SOT-23 T/R Automotive AEC-Q101 |
auf Bestellung 33531 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS83PH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -0.33A; 0.36W; PG-SOT23 Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -60V Drain current: -330mA Power dissipation: 0.36W Case: PG-SOT23 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Kind of package: reel Kind of channel: enhancement |
auf Bestellung 9925 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS83PH6327XTSA1 | Infineon Technologies |
Description: MOSFET P-CH 60V 330MA SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 330mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 330mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 2V @ 80µA Supplier Device Package: PG-SOT23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 3.57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 78 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 75128 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS83PH6327XTSA1 | Infineon Technologies |
MOSFETs P-Ch SOT-23-3 |
auf Bestellung 120160 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS83PH6327XTSA1 | INFINEON |
Description: INFINEON - BSS83PH6327XTSA1 - Leistungs-MOSFET, p-Kanal, 60 V, 330 mA, 2 ohm, SOT-23, OberflächenmontagetariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 330mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR Verlustleistung: 360mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 2ohm SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 17933 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
| BSS83PH6327XTSA1 |
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Hersteller: Infineon Technologies
Trans MOSFET P-CH 60V 0.33A 3-Pin SOT-23 T/R Automotive AEC-Q101
Trans MOSFET P-CH 60V 0.33A 3-Pin SOT-23 T/R Automotive AEC-Q101
auf Bestellung 1368000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.12 EUR |
| 6000+ | 0.1 EUR |
| 9000+ | 0.083 EUR |
| 15000+ | 0.064 EUR |
| BSS83PH6327XTSA1 |
![]() |
Hersteller: Infineon Technologies
Trans MOSFET P-CH 60V 0.33A 3-Pin SOT-23 T/R Automotive AEC-Q101
Trans MOSFET P-CH 60V 0.33A 3-Pin SOT-23 T/R Automotive AEC-Q101
auf Bestellung 96000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.16 EUR |
| BSS83PH6327XTSA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 330MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 330mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 78 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 60V 330MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 330mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 78 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 75000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.16 EUR |
| 6000+ | 0.15 EUR |
| 9000+ | 0.14 EUR |
| 15000+ | 0.13 EUR |
| 21000+ | 0.12 EUR |
| BSS83PH6327XTSA1 |
![]() |
Hersteller: Infineon
Transistor P-Channel MOSFET; 60V; 20V; 3Ohm; 330mA; 360mW; -55°C ~ 150°C; Equivalent: BSS83PH6327; BSS83PH6327XTSA1; BSS83P; BSS83PH6327XTSA1 TBSS83p
Anzahl je Verpackung: 100 Stücke
Transistor P-Channel MOSFET; 60V; 20V; 3Ohm; 330mA; 360mW; -55°C ~ 150°C; Equivalent: BSS83PH6327; BSS83PH6327XTSA1; BSS83P; BSS83PH6327XTSA1 TBSS83p
Anzahl je Verpackung: 100 Stücke
auf Bestellung 190 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 200+ | 0.22 EUR |
| BSS83PH6327XTSA1 |
![]() |
Hersteller: Infineon Technologies
Trans MOSFET P-CH 60V 0.33A 3-Pin SOT-23 T/R Automotive AEC-Q101
Trans MOSFET P-CH 60V 0.33A 3-Pin SOT-23 T/R Automotive AEC-Q101
auf Bestellung 33531 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 417+ | 0.35 EUR |
| 661+ | 0.22 EUR |
| 886+ | 0.16 EUR |
| 1000+ | 0.14 EUR |
| 3000+ | 0.1 EUR |
| 6000+ | 0.094 EUR |
| 9000+ | 0.085 EUR |
| BSS83PH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.33A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -330mA
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.33A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -330mA
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 9925 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 157+ | 0.46 EUR |
| 232+ | 0.31 EUR |
| 341+ | 0.21 EUR |
| 402+ | 0.18 EUR |
| 574+ | 0.12 EUR |
| 1000+ | 0.11 EUR |
| 3000+ | 0.087 EUR |
| 6000+ | 0.078 EUR |
| 9000+ | 0.074 EUR |
| BSS83PH6327XTSA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 330MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 330mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 78 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 60V 330MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 330mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 78 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 75128 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 24+ | 0.76 EUR |
| 39+ | 0.46 EUR |
| 100+ | 0.29 EUR |
| 500+ | 0.22 EUR |
| 1000+ | 0.19 EUR |
| BSS83PH6327XTSA1 |
![]() |
Hersteller: Infineon Technologies
MOSFETs P-Ch SOT-23-3
MOSFETs P-Ch SOT-23-3
auf Bestellung 120160 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 0.95 EUR |
| 10+ | 0.67 EUR |
| 100+ | 0.42 EUR |
| 500+ | 0.27 EUR |
| 1000+ | 0.23 EUR |
| 3000+ | 0.2 EUR |
| 6000+ | 0.17 EUR |
| BSS83PH6327XTSA1 |
![]() |
Hersteller: INFINEON
Description: INFINEON - BSS83PH6327XTSA1 - Leistungs-MOSFET, p-Kanal, 60 V, 330 mA, 2 ohm, SOT-23, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 330mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.5V
euEccn: NLR
Verlustleistung: 360mW
Bauform - Transistor: SOT-23
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 2ohm
SVHC: No SVHC (25-Jun-2025)
Description: INFINEON - BSS83PH6327XTSA1 - Leistungs-MOSFET, p-Kanal, 60 V, 330 mA, 2 ohm, SOT-23, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 330mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.5V
euEccn: NLR
Verlustleistung: 360mW
Bauform - Transistor: SOT-23
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 2ohm
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 17933 Stücke:
Lieferzeit 14-21 Tag (e)






