Technische Details BSS84AHZGT116 Rohm Semiconductor
Description: ROHM - BSS84AHZGT116 - Leistungs-MOSFET, p-Kanal, 60 V, 230 mA, 2.8 ohm, SOT-23, Oberflächenmontage, tariffCode: 85412100, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 60V, rohsCompliant: YES, Dauer-Drainstrom Id: 230mA, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, isCanonical: N, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Verlustleistung Pd: 350mW, Gate-Source-Schwellenspannung, max.: 2.5V, euEccn: NLR, Verlustleistung: 350mW, Bauform - Transistor: SOT-23, Qualifizierungsstandard der Automobilindustrie: AEC-Q101, Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Wandlerpolarität: p-Kanal, Kanaltyp: p-Kanal, Betriebswiderstand, Rds(on): 2.8ohm, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 2.8ohm, SVHC: No SVHC (25-Jun-2025).
Weitere Produktangebote BSS84AHZGT116 nach Preis ab 0.18 EUR bis 1.33 EUR
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BSS84AHZGT116 | ROHM SEMICONDUCTOR |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; Trench; unipolar; -60V; -230mA; Idm: -0.92A Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -230mA Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 6.4Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: -0.92A Technology: Trench |
auf Bestellung 314 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS84AHZGT116 | Rohm Semiconductor |
Description: PCH -60V -0.23A, SOT-23, SMALL S Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 230mA (Ta) Rds On (Max) @ Id, Vgs: 5.3Ohm @ 230mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: SST3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 34 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1824 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS84AHZGT116 | ROHM Semiconductor |
MOSFETs AECQ |
auf Bestellung 1013 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS84AHZGT116 | Rohm Semiconductor |
Trans MOSFET P-CH 60V 0.23A 3-Pin SST T/R Automotive AEC-Q101 |
auf Bestellung 377 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 35 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSS84AHZGT116 | Rohm Semiconductor |
Trans MOSFET P-CH 60V 0.23A 3-Pin SST T/R Automotive AEC-Q101 |
auf Bestellung 377 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 35 Stücke Im Einkaufswagen Stück im Wert von UAH |
| BSS84AHZGT116 |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -230mA; Idm: -0.92A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -230mA
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -0.92A
Technology: Trench
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -230mA; Idm: -0.92A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -230mA
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -0.92A
Technology: Trench
auf Bestellung 314 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 143+ | 0.6 EUR |
| 172+ | 0.5 EUR |
| 244+ | 0.35 EUR |
| 295+ | 0.29 EUR |
| BSS84AHZGT116 |
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Hersteller: Rohm Semiconductor
Description: PCH -60V -0.23A, SOT-23, SMALL S
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 5.3Ohm @ 230mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: SST3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 34 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: PCH -60V -0.23A, SOT-23, SMALL S
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 5.3Ohm @ 230mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: SST3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 34 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1824 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 23+ | 0.92 EUR |
| 37+ | 0.57 EUR |
| 100+ | 0.36 EUR |
| 500+ | 0.27 EUR |
| 1000+ | 0.24 EUR |
| BSS84AHZGT116 |
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Hersteller: ROHM Semiconductor
MOSFETs AECQ
MOSFETs AECQ
auf Bestellung 1013 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.33 EUR |
| 10+ | 0.92 EUR |
| 100+ | 0.58 EUR |
| 500+ | 0.36 EUR |
| 1000+ | 0.26 EUR |
| 3000+ | 0.2 EUR |
| 6000+ | 0.18 EUR |
| BSS84AHZGT116 |
|
Hersteller: Rohm Semiconductor
Trans MOSFET P-CH 60V 0.23A 3-Pin SST T/R Automotive AEC-Q101
Trans MOSFET P-CH 60V 0.23A 3-Pin SST T/R Automotive AEC-Q101
auf Bestellung 377 Stücke:
Lieferzeit 14-21 Tag (e)
| BSS84AHZGT116 |
|
Hersteller: Rohm Semiconductor
Trans MOSFET P-CH 60V 0.23A 3-Pin SST T/R Automotive AEC-Q101
Trans MOSFET P-CH 60V 0.23A 3-Pin SST T/R Automotive AEC-Q101
auf Bestellung 377 Stücke:
Lieferzeit 14-21 Tag (e)