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Technische Details BSS84AKV,115 Nexperia
Description: NEXPERIA - BSS84AKV,115 - Dual-MOSFET, p-Kanal, 50 V, 50 V, 170 mA, 170 mA, 4.5 ohm, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 170mA, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, Drain-Source-Spannung Vds, p-Kanal: 50V, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 170mA, Drain-Source-Durchgangswiderstand, p-Kanal: 4.5ohm, Verlustleistung, p-Kanal: 500mW, Drain-Source-Spannung Vds, n-Kanal: 50V, euEccn: NLR, Bauform - Transistor: SOT-666, Anzahl der Pins: 6Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 4.5ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: p-Kanal, Verlustleistung, n-Kanal: 500mW, Betriebstemperatur, max.: 150°C, SVHC: No SVHC (27-Jun-2024).
Weitere Produktangebote BSS84AKV,115 nach Preis ab 0.11 EUR bis 0.75 EUR
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BSS84AKV,115 | Nexperia |
 Trans MOSFET P-CH 50V 0.17A 6-Pin SOT-666 T/R |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS84AKV,115 | Nexperia USA Inc. |
Description: MOSFET 2P-CH 50V 0.17A SOT666 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 170mA Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V Rds On (Max) @ Id, Vgs: 7.5Ohm @ 100mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SOT-666 Grade: Automotive Part Status: Not For New Designs Qualification: AEC-Q101 |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS84AKV,115 | Nexperia USA Inc. |
Description: MOSFET 2P-CH 50V 0.17A SOT666 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 170mA Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V Rds On (Max) @ Id, Vgs: 7.5Ohm @ 100mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SOT-666 Part Status: Not For New Designs Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 5260 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS84AKV,115 | NEXPERIA |
Description: NEXPERIA - BSS84AKV,115 - Dual-MOSFET, p-Kanal, 50 V, 50 V, 170 mA, 170 mA, 4.5 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 170mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 50V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 170mA Drain-Source-Durchgangswiderstand, p-Kanal: 4.5ohm Verlustleistung, p-Kanal: 500mW Drain-Source-Spannung Vds, n-Kanal: 50V euEccn: NLR Bauform - Transistor: SOT-666 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 4.5ohm productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Verlustleistung, n-Kanal: 500mW Betriebstemperatur, max.: 150°C SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BSS84AKV,115 | NEXPERIA |
Description: NEXPERIA - BSS84AKV,115 - Dual-MOSFET, p-Kanal, 50 V, 50 V, 170 mA, 170 mA, 4.5 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 170mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 50V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 170mA Drain-Source-Durchgangswiderstand, p-Kanal: 4.5ohm Verlustleistung, p-Kanal: 500mW Drain-Source-Spannung Vds, n-Kanal: 50V euEccn: NLR Bauform - Transistor: SOT-666 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 4.5ohm productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Verlustleistung, n-Kanal: 500mW Betriebstemperatur, max.: 150°C SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 30 Stücke Im Einkaufswagen Stück im Wert von UAH |
| BSS84AKV,115 |
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Hersteller: Nexperia
Trans MOSFET P-CH 50V 0.17A 6-Pin SOT-666 T/R
Trans MOSFET P-CH 50V 0.17A 6-Pin SOT-666 T/R
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4000+ | 0.14 EUR |
| 8000+ | 0.11 EUR |
| BSS84AKV,115 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET 2P-CH 50V 0.17A SOT666
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 170mA
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-666
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q101
Description: MOSFET 2P-CH 50V 0.17A SOT666
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 170mA
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-666
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4000+ | 0.15 EUR |
| BSS84AKV,115 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET 2P-CH 50V 0.17A SOT666
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 170mA
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-666
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2P-CH 50V 0.17A SOT666
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 170mA
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-666
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5260 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 28+ | 0.75 EUR |
| 46+ | 0.46 EUR |
| 100+ | 0.29 EUR |
| 500+ | 0.21 EUR |
| 1000+ | 0.19 EUR |
| 2000+ | 0.17 EUR |
| BSS84AKV,115 |
|
Hersteller: NEXPERIA
Description: NEXPERIA - BSS84AKV,115 - Dual-MOSFET, p-Kanal, 50 V, 50 V, 170 mA, 170 mA, 4.5 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 170mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
Drain-Source-Spannung Vds, p-Kanal: 50V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 170mA
Drain-Source-Durchgangswiderstand, p-Kanal: 4.5ohm
Verlustleistung, p-Kanal: 500mW
Drain-Source-Spannung Vds, n-Kanal: 50V
euEccn: NLR
Bauform - Transistor: SOT-666
Anzahl der Pins: 6Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 4.5ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Verlustleistung, n-Kanal: 500mW
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (27-Jun-2024)
Description: NEXPERIA - BSS84AKV,115 - Dual-MOSFET, p-Kanal, 50 V, 50 V, 170 mA, 170 mA, 4.5 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 170mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
Drain-Source-Spannung Vds, p-Kanal: 50V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 170mA
Drain-Source-Durchgangswiderstand, p-Kanal: 4.5ohm
Verlustleistung, p-Kanal: 500mW
Drain-Source-Spannung Vds, n-Kanal: 50V
euEccn: NLR
Bauform - Transistor: SOT-666
Anzahl der Pins: 6Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 4.5ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Verlustleistung, n-Kanal: 500mW
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| BSS84AKV,115 |
|
Hersteller: NEXPERIA
Description: NEXPERIA - BSS84AKV,115 - Dual-MOSFET, p-Kanal, 50 V, 50 V, 170 mA, 170 mA, 4.5 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 170mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
Drain-Source-Spannung Vds, p-Kanal: 50V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 170mA
Drain-Source-Durchgangswiderstand, p-Kanal: 4.5ohm
Verlustleistung, p-Kanal: 500mW
Drain-Source-Spannung Vds, n-Kanal: 50V
euEccn: NLR
Bauform - Transistor: SOT-666
Anzahl der Pins: 6Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 4.5ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Verlustleistung, n-Kanal: 500mW
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (27-Jun-2024)
Description: NEXPERIA - BSS84AKV,115 - Dual-MOSFET, p-Kanal, 50 V, 50 V, 170 mA, 170 mA, 4.5 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 170mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
Drain-Source-Spannung Vds, p-Kanal: 50V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 170mA
Drain-Source-Durchgangswiderstand, p-Kanal: 4.5ohm
Verlustleistung, p-Kanal: 500mW
Drain-Source-Spannung Vds, n-Kanal: 50V
euEccn: NLR
Bauform - Transistor: SOT-666
Anzahl der Pins: 6Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 4.5ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Verlustleistung, n-Kanal: 500mW
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)