
auf Bestellung 2996 Stücke:
Lieferzeit 122-126 Tag (e)
Anzahl | Preis |
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4+ | 0.77 EUR |
10+ | 0.58 EUR |
100+ | 0.33 EUR |
1000+ | 0.17 EUR |
3000+ | 0.14 EUR |
9000+ | 0.12 EUR |
24000+ | 0.11 EUR |
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Technische Details BSS84HE3-TP Micro Commercial Components (MCC)
Description: MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 200mA (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: SOT-23, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 27 pF @ 30 V, Qualification: AEC-Q101, Rds On (Max) @ Id, Vgs: 3.6Ohm @ 150mA, 10V, Power Dissipation (Max): 500mW (Tj).
Weitere Produktangebote BSS84HE3-TP
Foto | Bezeichnung | Hersteller | Beschreibung |
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BSS84HE3-TP | Hersteller : Micro Commercial Co |
Description: MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 27 pF @ 30 V Qualification: AEC-Q101 Rds On (Max) @ Id, Vgs: 3.6Ohm @ 150mA, 10V Power Dissipation (Max): 500mW (Tj) |
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